Facilitation of ion implantation through femtosecond-laser-induced modifications on diamond surface
Facilitation of ion implantation through femtosecond-laser-induced modifications on diamond surface
批准号:
19K05033
负责人:
OKADA Tatsuya
金额:
$2.75万
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (C)
财政年份:
2019
资助国家:
日本
项目状态:
已结题
起止时间:
2019-04-01 至 2022-03-31
中文摘要
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英文摘要
期刊论文(2)
专著(0)
科研奖励(0)
会议论文
Modifications induced by femtosecond laser irradiation on (001) surface of diamond crystal
飞秒激光照射金刚石晶体 (001) 表面引起的改性
DOI:
--
发表时间:
2021
期刊:
影响因子:
--
作者:
[Kenya Bando, Tomoyuki Ueki, Hiromu Hisazawa, Takuro Tomita, Tatsuya Okada and Makoto Yamaguchi]
通讯作者:
Tatsuya Okada and Makoto Yamaguchi
フェムト秒レーザ照射したダイヤモンド表面へのホウ素イオン注入
飞秒激光照射下硼离子注入金刚石表面
DOI:
--
发表时间:
2020
期刊:
影响因子:
--
作者:
[坂東 賢哉, 植木 智之, 富田 卓朗, 久澤 大夢, 岡田 達也, 小林 幸雄, 伊藤 元雄]
通讯作者:
伊藤 元雄
A proposal for electrode formation at low annealing temperatures via the application of femtosecond-laser-induced modifications on silicon carbide
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批准号:15K06466
-
项目类别:Grant-in-Aid for Scientific Research (C)
-
资助金额:$3.24万
-
财政年份:2015
-
负责人:OKADA Tatsuya
-
依托单位:
New understanding of deformation and recrystallization based on single-crystal stress measurement
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批准号:23560088
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项目类别:Grant-in-Aid for Scientific Research (C)
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资助金额:$2.66万
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财政年份:2011
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负责人:OKADA Tatsuya
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依托单位:
Source of surface defects in silicon carbide epitaxial files and their elimination method
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批准号:16560009
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项目类别:Grant-in-Aid for Scientific Research (C)
-
资助金额:$2.66万
-
财政年份:2004
-
负责人:OKADA Tatsuya
-
依托单位:
Study on Multifractal and its Applications to the Digital Sum Problems
-
批准号:12640135
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项目类别:Grant-in-Aid for Scientific Research (C)
-
资助金额:$0.45万
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财政年份:2000
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负责人:OKADA Tatsuya
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依托单位:
海外基金