A proposal for electrode formation at low annealing temperatures via the application of femtosecond-laser-induced modifications on silicon carbide
A proposal for electrode formation at low annealing temperatures via the application of femtosecond-laser-induced modifications on silicon carbide
批准号:
15K06466
负责人:
OKADA Tatsuya
金额:
$3.24万
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (C)
财政年份:
2015
资助国家:
日本
项目状态:
已结题
起止时间:
2015-04-01 至 2018-03-31
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フェムト秒レーザ照射誘起改質を応用したNi/SiC界面における低温拡散
使用飞秒激光辐照诱导改性在 Ni/SiC 界面进行低温扩散
DOI:
--
发表时间:
2018
期刊:
影响因子:
--
作者:
[Tatsuya Okada, Takuro Tomita, Tomoyuki Ueki, Yuki Masai, Yota Bando, Yasuhiro Tanaka, 渕上裕暉,橋本拓哉,川上博貴,植木智之,富田卓朗,岡田達也,田中康弘]
通讯作者:
渕上裕暉,橋本拓哉,川上博貴,植木智之,富田卓朗,岡田達也,田中康弘
DOI:
10.7567/jjap.56.026601
发表时间:
2017-01
期刊:
Japanese Journal of Applied Physics
影响因子:
1.5
作者:
[T. Okada;T. Tomita;Tomoyuki Ueki;Y. Masai;Y. Bando;Yasuhiro Tanaka]
通讯作者:
T. Okada;T. Tomita;Tomoyuki Ueki;Y. Masai;Y. Bando;Yasuhiro Tanaka
Al/ダイヤモンド単結晶界面におけるフェムト秒レーザ照射誘起改質
飞秒激光辐照诱导铝/金刚石单晶界面改性
DOI:
--
发表时间:
2016
期刊:
影响因子:
--
作者:
[Tatsuya Okada, Takuro Tomita, Tomoyuki Ueki, Yuki Masai, Yota Bando, Yasuhiro Tanaka, 渕上裕暉,橋本拓哉,川上博貴,植木智之,富田卓朗,岡田達也,田中康弘, 二村大,川上博貴,植木智之,富田卓朗,岡田達也,田中康弘, 政井 勇輝,植木 智之,田中 康弘,富田 卓朗,岡田 達也]
通讯作者:
政井 勇輝,植木 智之,田中 康弘,富田 卓朗,岡田 達也
Femtosecond-laser-induced modifications on the surface of a single-crystalline diamond
飞秒激光诱导单晶金刚石表面改性
DOI:
10.7567/jjap.56.112701
发表时间:
2017
期刊:
Japanese Journal of Applied Physics
影响因子:
1.5
作者:
[Tatsuya Okada, Takuro Tomita, Tomoyuki Ueki, Yuki Masai, Yota Bando, and Yasuhiro Tanaka]
通讯作者:
and Yasuhiro Tanaka
Low-temperature diffusion assisted by femtosecond laser-induced modifications at Ni/SiC interface
Ni/SiC 界面飞秒激光诱导改性辅助低温扩散
DOI:
10.7567/apex.11.016502
发表时间:
2018
期刊:
Applied Physics Express
影响因子:
2.3
作者:
[Tatsuya Okada, Takuro Tomita, Tomoyuki Ueki, Takuya Hashimoto, Hiroki Kawakami, Yuki Fuchikami, Hiromu Hisazawa, and Yasuhiro Tanaka]
通讯作者:
and Yasuhiro Tanaka
共 6 条
Facilitation of ion implantation through femtosecond-laser-induced modifications on diamond surface
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批准号:19K05033
-
项目类别:Grant-in-Aid for Scientific Research (C)
-
资助金额:$2.75万
-
财政年份:2019
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负责人:OKADA Tatsuya
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依托单位:
New understanding of deformation and recrystallization based on single-crystal stress measurement
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批准号:23560088
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项目类别:Grant-in-Aid for Scientific Research (C)
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资助金额:$2.66万
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财政年份:2011
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负责人:OKADA Tatsuya
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依托单位:
Source of surface defects in silicon carbide epitaxial files and their elimination method
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批准号:16560009
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项目类别:Grant-in-Aid for Scientific Research (C)
-
资助金额:$2.66万
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财政年份:2004
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负责人:OKADA Tatsuya
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依托单位:
Study on Multifractal and its Applications to the Digital Sum Problems
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批准号:12640135
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项目类别:Grant-in-Aid for Scientific Research (C)
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资助金额:$0.45万
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财政年份:2000
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负责人:OKADA Tatsuya
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依托单位:
海外基金