Life time prediction for analog circuit components utilizing digital degradation monitors

利用数字退化监视器预测模拟电路元件的寿命

• 批准号: 354944200
• 负责人: Dr.-Ing. Dagmar Peters-Drolshagen
• 金额: --
• 依托单位: Institut für Theoretische Elektrotechnik und Mikroelektronik (ITEM)
• 依托单位国家: 德国
• 项目类别: Research Grants
• 财政年份: 2018
• 资助国家: 德国
• 起止时间: 2017-12-31 至 2021-12-31
• 项目状态: 已结题
• 来源: https://gepris.dfg.de/gepris/projekt/354944200?language=en
• 关键词: Life; time; prediction; analog; circuit

Nowadays it becomes more common to use integrated circuits within safety critical applications. This necessitates that specifications of these circuits are satisfied over the whole lifetime. However, the characteristic properties of an integrated circuit are affected by temporal changes. Physical effects in the semiconductor structures are responsible for these influences. Time dependent changes in material properties are called aging or degradation. These time dependent mechanisms cause the change in characteristic properties of an integrated circuit which may cause a malfunction of an electronic system or shorten its lifetime. In spite of several innovative solutions for the design of integrated circuits with a scope on reliability a shift in the behavior of the circuit cannot be foreclosed. The main objectives of this research proposal are new methods for measuring the conditions of degradation of analog integrated circuits. Based on the knowledge of the condition of degradation theoretical rudiments for the prediction of lifetime will be evolved. In order to achieve these two goals, measuring the degradation and lifetime prediction, a formal method based on the coefficients of adaptive filters for the determination of nominal circuit performances will be developed. Besides these nominal performances the minimal and maximal specification boundaries will be evaluated. Moreover, the time dependent change caused by aging of these performances will be determined. By observing the coefficients of an adaptive filter over time the actual state of any circuit can be determined. The continuous observation of these coefficients can be utilized to draw inferences about system failures occurring during operation. In order to build an estimation of the degradation of microelectronic circuits on this basis the parasitic influences on the circuit have to be measured in a way that these effects are subsequently distinguishable. Therefore, multi sensor interfaces are built in the project to determine die PVTinfluences. With the knowledge of the nominal circuit performances, the actual state of the system, and the PVT-influences methods to determine the degradation of a circuit can be developed. The therewith derived degradation state represents the origin for the development of enhanced methods for the lifetime prediction of integrated circuits. In this project these methods will be exemplarily realized involving first theoretical approaches.

如今，在安全关键应用中使用集成电路变得越来越普遍。这就要求这些电路的规格在整个寿命期内都得到满足。然而，集成电路的特性会受到时间变化的影响。半导体结构中的物理效应是造成这些影响的原因。材料性能随时间的变化称为老化或降解。这些与时间相关的机制导致集成电路的特征性质的变化，这可能导致电子系统的故障或缩短其寿命。尽管有几个创新的解决方案，用于设计集成电路的范围内的可靠性的转变，电路的行为不能被排除。本研究提案的主要目标是测量模拟集成电路退化条件的新方法。基于对退化条件的了解，将发展出预测寿命的理论雏形。为了实现这两个目标，测量退化和寿命预测，一个正式的方法的基础上的系数的自适应滤波器的标称电路性能的确定将开发。除了这些标称性能外，还将评估最小和最大规格边界。此外，将确定这些性能老化引起的时间依赖性变化。通过观察自适应滤波器随时间的系数，可以确定任何电路的实际状态。这些系数的连续观察可以用来推断在操作期间发生的系统故障。为了在此基础上建立对微电子电路退化的估计，必须以随后可区分这些效应的方式测量对电路的寄生影响。因此，在项目中建立了多传感器接口，以确定模具PVT影响。有了标称电路性能的知识，系统的实际状态，以及PVT影响的方法，以确定电路的退化可以开发。由此导出的退化状态代表了用于集成电路寿命预测的增强方法的发展的起源。在这个项目中，这些方法将被示范性地实现，涉及第一理论方法。