Wurtzite zinc-based oxynitrides as promising photovoltaic absorbers: epitaxy, band-structure engineering and heterostructures

纤锌矿锌基氮氧化物作为有前途的光伏吸收剂：外延、能带结构工程和异质结构

• 批准号: 382451985
• 负责人: Professor Dr. Marius Grundmann, since 9/2020
• 金额: --
• 依托单位: Abteilung Halbleiterphysik
• 依托单位国家: 德国
• 项目类别: Research Grants
• 财政年份: 2017
• 资助国家: 德国
• 起止时间: 2016-12-31 至 2020-12-31
• 项目状态: 已结题
• 来源: https://gepris.dfg.de/gepris/projekt/382451985?language=en
• 关键词: Wurtzite; zinc; based; oxynitrides; promising

This project aims to overcome the fundamental problems of thin film solar cells, such as low cell conversion efficiency as well as technical barriers for the use of non-toxic materials. For this purpose, a new class of unconventional semiconductors with wurtzite structure will be developed by alloying ZnO with III-nitrides (AlN, GaN, InN). Bandgap engineering of such Zn-based oxynitride thin films is achievable by modulating the valence and/or conduction band edges. The substitution of both anion (N on O-site) and cation (Al, Ga and In on Zn-site) allows controllable band structures while ensuring crystallinity. As proof of concept we could reduce the bandgap of ZnO-GaN much below the values of the single compounds. The bandgap would be thereby modulated into the visible light or near-infrared regions (near 1.3 eV) for effective solar-light harvesting. The anticipated goal is tackling the critical problems of Zn-based materials in epitaxial growth and band-structure engineering for photovoltaic application.

该项目旨在克服薄膜太阳能电池的基本问题，如电池转换效率低以及使用无毒材料的技术障碍。为此，一类新的非常规的半导体与纤锌矿结构将开发合金ZnO与III族氮化物（AlN，GaN，InN）。这种Zn基氮氧化物薄膜的带隙工程可通过调制价带和/或导带边缘来实现。阴离子（N在O位上）和阳离子（Al、Ga和In在Zn位上）两者的取代允许可控的能带结构，同时确保结晶度。作为概念证明，我们可以将ZnO-GaN的带隙降低到远低于单一化合物的值。带隙将由此被调制到可见光或近红外区域（接近1.3eV）中，以用于有效的太阳光收集。预期的目标是解决锌基材料在光伏应用的外延生长和能带结构工程中的关键问题。

项目成果

Controllable Growth of Copper Iodide for High-Mobility Thin Films and Self-Assembled Microcrystals

• DOI: 10.1021/acsaelm.0c00692
• 发表时间: 2020-10
• 作者: C. Yang;E. Rose;Wenlei Yu;T. Stralka;F. Geng;M. Lorenz;M. Grundmann