大容量磁気メモリ用単結晶磁気抵抗素子のシリコンウェハー上で開発

在过去的一年里，我们在《应用物理通讯》上发表了1篇论文，并在日本申请了国内专利。我们开发了一系列新的Heusler合金，Co2(Fe1-xTix)Si(CFTS)(0&lt；x&lt；1)，它具有高自旋极化和高L21级驱动力的优点，即使在较低的热处理温度下也是如此。此外，我们还克服了利用NiAl缓冲材料在硅衬底上生长高质量外延铁磁薄膜的困难，并成功地制备了高性能的硅基CPP-GMR器件，这是读取头传感器应用的一大突破。更重要的是，这一结果可以推广到开发下一代千兆字节级MRAM应用的硅基外延MTJ。

During the past fiscal year, we had published 1 papers in Applied Physics Letters and applied for a domestic patent in Japan. We has developed a new series of Heusler alloys, Co2(Fe1-xTix)Si (CFTS) (0<x<1), which has a merit of high spin-polarization together with high driving force for L21-order even at low annealing temperature. In addition, we has also overcome the difficulty of growing high quality epitaxial ferromagnetic films on Si substrate by using NiAl buffer material and successfully fabricated high performance Si-based CPP-GMR device, which is a great breakthrough for read head sensor application. More importantly, this result can be extended to develop Si-based epitaxial MTJs for next generation gigabyte-class MRAM application.