大容量磁気メモリ用単結晶磁気抵抗素子のシリコンウェハー上で開発

开发硅片大容量磁存储器用单晶磁阻元件

• 批准号: 17J01091
• 负责人: 陳 嘉民
• 金额: $ 1.09万
• 依托单位: University of Tsukuba
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for JSPS Fellows
• 财政年份: 2017
• 资助国家: 日本
• 起止时间: 2017-04-26 至 2019-03-31
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-17J01091/
• 关键词: CPP-GMR; Heusler alloy; Spintronic; Epitaxial growth; Magnetic memory

During the past fiscal year, we had published 1 papers in Applied Physics Letters and applied for a domestic patent in Japan. We has developed a new series of Heusler alloys, Co2(Fe1-xTix)Si (CFTS) (0<x<1), which has a merit of high spin-polarization together with high driving force for L21-order even at low annealing temperature. In addition, we has also overcome the difficulty of growing high quality epitaxial ferromagnetic films on Si substrate by using NiAl buffer material and successfully fabricated high performance Si-based CPP-GMR device, which is a great breakthrough for read head sensor application. More importantly, this result can be extended to develop Si-based epitaxial MTJs for next generation gigabyte-class MRAM application.

在过去的财政年度，我们在Applied Physics Letters上发表了1篇论文，并在日本申请了国内专利。我们开发了一系列新的Heusler合金Co_2（Fe_（1-x）Ti_x）Si（CFTS）（0<x<1），它具有高自旋极化和高的L21阶驱动力的优点，即使在较低的退火温度下也是如此。此外，我们还克服了用NiAl缓冲材料在Si衬底上生长高质量外延铁磁薄膜的困难，成功制备了高性能的Si基CPP-GMR器件，这是读头传感器应用的重大突破。更重要的是，这一结果可以扩展到开发下一代千兆字节级MRAM应用的Si基外延MTJ。

项目成果

単結晶磁気抵抗素子、その製造方法及びこれを用いたデバイス

单晶磁阻元件及其制造方法和使用该元件的装置

• 发表时间: 2017

Fabrication of Single Crystalline Magnetoresistive Sensors on Polycrystalline Electrode using Three-Dimensional Integration Technology

利用三维集成技术在多晶电极上制作单晶磁阻传感器

• 发表时间: 2017
• 作者: Jiamin Chen;Y. Sakuraba;K. Masuda;Y. Miura;S. Li;S. Kasai;T. Furubayashi;K. Hono;YAGUCHI Naohide;矢口直英;Jiamin Chen;Jiamin Chen;矢口直英;矢口直英;矢口直英;Jiamin Chen;Jiamin Chen;矢口直英;矢口直英;矢口直英;Jiamin Chen
• 通讯作者: Jiamin Chen

Enhancement of L21 order and spin-polarization of Co2FeSi thin film by substitution of Fe with Ti

Ti取代Fe增强Co2FeSi薄膜的L21序和自旋极化

• DOI: 10.1063/1.4985237
• 发表时间: 2017
• 期刊: Applied Physics Letters
• 影响因子: 4
• 作者: Jiamin Chen;Y. Sakuraba;K. Masuda;Y. Miura;S. Li;S. Kasai;T. Furubayashi;K. Hono
• 通讯作者: K. Hono

Effect of material selection on bonding interface for direct wafer bonding processing of epitaxial magnetoresistive devices

外延磁阻器件晶圆直接键合工艺中材料选择对键合界面的影响

• 发表时间: 2017
• 作者: Jiamin Chen;Y. Sakuraba;K. Masuda;Y. Miura;S. Li;S. Kasai;T. Furubayashi;K. Hono;YAGUCHI Naohide;矢口直英;Jiamin Chen
• 通讯作者: Jiamin Chen

Realization of high quality epitaxial current-perpendicular-to-plane giant magnetoresistive pseudo spin-valves on Si(001) wafer using NiAl buffer layer

使用NiAl缓冲层在Si(001)晶片上实现高质量外延电流垂直于平面的巨磁阻赝自旋阀

• 发表时间: 2017
• 作者: Jiamin Chen;Y. Sakuraba;K. Masuda;Y. Miura;S. Li;S. Kasai;T. Furubayashi;K. Hono;YAGUCHI Naohide;矢口直英;Jiamin Chen;Jiamin Chen;矢口直英;矢口直英;矢口直英;Jiamin Chen
• 通讯作者: Jiamin Chen