Fabrication and electronic-structure analysis of topological nano-ribbon

尽管人们一直在努力寻找携带自旋螺旋Dirac费米子的新型拓扑材料，但通过角分辨光电子能谱对拓扑绝缘体表面态的观察，发现的大多是三维材料。虽然2D拓扑系统在理论上被提出用于几个薄膜系统，但这种材料的实现主要由于难以观察1D边缘状态而被限制在非常少的系统中。在这个研究项目中，我们已经进行了高分辨率的自旋分辨ARPES几个拓扑绝缘体和薄膜系统，以阐明预期的一维边缘状态，这将出现在纳米带结构与非平凡的拓扑性质。我们已经成功地确定了几种拓扑绝缘体和相关材料的体和表面/边缘电子结构。

Despite of a huge effort for searching new topological materials carrying spin-helical Dirac fermions, mostly discovered are 3D materials by observing the surface state of topological insulator with angle-resolved photoemission spectroscopy. While the 2D topological system was theoretically proposed for several thin-film systems, a realization of such materials has been limited to very few systems mainly due to the difficulty in observing 1D edge state. In this research project, we have performed high-resolution spin-resolved ARPES on several topological insulators and thin film systems in order to elucidate the expected 1D-edge state which would emerge on nano-ribbon structure with a non-trivial topological nature. We have successfully determined bulk and surface/edge electronic structure in several topological insulators and related materials.