Fabrication and electronic-structure analysis of topological nano-ribbon

拓扑纳米带的制备及电子结构分析

• 批准号: 24654096
• 负责人: SOUMA Seigo
• 金额: $ 2.25万
• 依托单位: Tohoku University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Challenging Exploratory Research
• 财政年份: 2012
• 资助国家: 日本
• 起止时间: 2012-04-01 至 2014-03-31
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-24654096/
• 关键词: 角度分解光電子分光; トポロジカル絶縁体; 界面; スピントロニクス

Despite of a huge effort for searching new topological materials carrying spin-helical Dirac fermions, mostly discovered are 3D materials by observing the surface state of topological insulator with angle-resolved photoemission spectroscopy. While the 2D topological system was theoretically proposed for several thin-film systems, a realization of such materials has been limited to very few systems mainly due to the difficulty in observing 1D edge state. In this research project, we have performed high-resolution spin-resolved ARPES on several topological insulators and thin film systems in order to elucidate the expected 1D-edge state which would emerge on nano-ribbon structure with a non-trivial topological nature. We have successfully determined bulk and surface/edge electronic structure in several topological insulators and related materials.

尽管人们一直在努力寻找携带自旋螺旋Dirac费米子的新型拓扑材料，但通过角分辨光电子能谱对拓扑绝缘体表面态的观察，发现的大多是三维材料。虽然2D拓扑系统在理论上被提出用于几个薄膜系统，但这种材料的实现主要由于难以观察1D边缘状态而被限制在非常少的系统中。在这个研究项目中，我们已经进行了高分辨率的自旋分辨ARPES几个拓扑绝缘体和薄膜系统，以阐明预期的一维边缘状态，这将出现在纳米带结构与非平凡的拓扑性质。我们已经成功地确定了几种拓扑绝缘体和相关材料的体和表面/边缘电子结构。

项目成果

Tunability of the k-space location of the Dirac cones in the topological crystalline insulator Pb1-xSnxTe

• DOI: 10.1103/physrevb.87.155105
• 发表时间: 2013-04-02
• 期刊: PHYSICAL REVIEW B
• 影响因子: 3.7
• 作者: Tanaka, Y.;Sato, T.;Ando, Yoichi
• 通讯作者: Ando, Yoichi

Spin-helical Dirac-cone surface states of 3D topological materials

3D 拓扑材料的自旋螺旋狄拉克锥表面态

• 发表时间: 2013
• 作者: K;Miyagawa;Y. Kubozono;高山あかり;Dong Liu，Kazuya Miyagawa，Masafumi Tamura，Kazushi Kanoda;正満拓也;宮川和也;Yoshihiro Kubozono;田中祐輔;Kazuya Miyagawa;Yoshihiro Kubozono;Dong Liu，Kazuya Miyagawa，Kazushi Kanoda，Masafumi Tamura;相馬清吾;Yoshihiro kubozono;Seigo Souma
• 通讯作者: Seigo Souma

トポロジカル絶縁体新物質と吸着成長した金属薄膜の高分解能ARPES

新型拓扑绝缘体材料和吸附生长金属薄膜的高分辨率 ARPES

• 发表时间: 2013
• 作者: K;Miyagawa;Y. Kubozono;高山あかり;Dong Liu，Kazuya Miyagawa，Masafumi Tamura，Kazushi Kanoda;正満拓也;宮川和也;Yoshihiro Kubozono;田中祐輔;Kazuya Miyagawa;Yoshihiro Kubozono;Dong Liu，Kazuya Miyagawa，Kazushi Kanoda，Masafumi Tamura;相馬清吾;Yoshihiro kubozono;Seigo Souma;平田倫啓，宮川和也，田村雅史，鹿野田一司;Yoshihiro Kubozono;相馬清吾
• 通讯作者: 相馬清吾

スピン分解ARPESによるトポロジカル絶縁体の電子構造の研究

自旋分辨ARPES研究拓扑绝缘体的电子结构

• 发表时间: 2012
• 作者: S. Oda;Y. Wakasa;H. Kubo;K. Obara;H. Yano;O. Ishikawa;T. Hata;相馬清吾;織田慎平,久保博史,永合祐輔,西嶋陽,小原顕,矢野英雄,石川修六,畑徹;Seigo Souma;織田慎平*，久保博史，永合祐輔，西嶋陽，小原顕，矢野英雄，石川修六，畑徹;相馬清吾
• 通讯作者: 相馬清吾

Two types of Dirac-cone surface states on the (111) surface of topological crystalline insulator SnTe

拓扑晶体绝缘体SnTe（111）面上的两种狄拉克锥表面态

• DOI: 10.1103/physrevb.88.235125
• 发表时间: 2013
• 期刊: Phys. Rev. B
• 作者: Y. Tanaka;T. Shoman;K. Nakayama;S. Souma;T. Sato;T. Takahashi;M. Novak;K. Segawa;and Y. Ando
• 通讯作者: and Y. Ando