Development of nano waires from threading dislocations

利用螺纹位错开发纳米线

• 批准号: 24656406
• 负责人: YAMAMOTO Takahisa
• 金额: $ 2.58万
• 依托单位: Nagoya University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Challenging Exploratory Research
• 财政年份: 2012
• 资助国家: 日本
• 起止时间: 2012-04-01 至 2014-03-31
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-24656406/
• 关键词: 転位; 薄膜; 酸化ニッケル; 強磁性; 反強磁性; NiO; チタン酸ストロンチウム; STEM

In this study, we aimed to develop a new functional materials using dislocations. To grow threading dislocations, NiO solid thin film was grown on SrTiO3 substrate by pulsed laser deposition (PLD) technique. A small lattice mismatch between NiO and SrTiO3 results in the formation of threading dislocations in NiO thin films. Generally, NiO is an anti-ferromagnetic material. However, it was found very unique magnetic properties could be obtained at the threading dislocations formed in NiO thin films grown on SrTiO3 substrate. By measuring with a magnetic force microscope, we confirmed ferromagnetic property can be obtained only at the threading dislocations. We concluded that appearance of the ferromagnetic property only at the threading dislocation core is due to a lattice structural change of NiO at the threading dislocation core. The result was published in Nature Materials.

在这项研究中，我们旨在利用位错开发一种新的功能材料。采用脉冲激光沉积（PLD）技术在SrTiO3衬底上生长NiO固体薄膜，以生长螺纹位错。NiO与SrTiO3之间的小晶格失配导致NiO薄膜中形成螺纹位错。一般来说，NiO是一种反铁磁性材料。然而，在SrTiO3衬底上生长的NiO薄膜在形成螺纹位错时可以获得非常独特的磁性能。通过磁力显微镜的测量，我们证实了只有在螺纹位错处才能获得铁磁性能。我们得出结论，仅在螺纹位错核心处出现铁磁性是由于螺纹位错核心处的NiO晶格结构发生了变化。该研究结果发表在《自然材料》杂志上。

项目成果

Labyrinth-type domain structure of heteroepitaxial SrMnO2.5 film

• DOI: 10.1063/1.4811152
• 发表时间: 2013-06-10
• 期刊: APPLIED PHYSICS LETTERS
• 影响因子: 4
• 作者: Kobayashi, Shunsuke;Ikuhara, Yuichi;Yamamoto, Takahisa
• 通讯作者: Yamamoto, Takahisa

Ferromagnetic dislocations in antiferromagnetic NiO

• DOI: 10.1038/nnano.2013.45
• 发表时间: 2013-04-01
• 期刊: NATURE NANOTECHNOLOGY
• 影响因子: 38.3
• 作者: Sugiyama, Issei;Shibata, Naoya;Ikuhara, Yuichi
• 通讯作者: Ikuhara, Yuichi