Development of dislocation nano-wires in SrTiO_3

位错是一维晶格缺陷的一种。在位错周围的几个纳米区域，存在晶格缺陷引起的应力。在该区域，由于晶格缺陷引起的应力，扩散系数增大，这被称为管状扩散。利用这一现象，我们可以在块体内部的位错核周围制备纳米线。在本研究中，我们尝试在钛酸锶、氮化铝等材料中制备位错纳米线。

Dislocations are a kind of one dimensional lattice defects. In the several nm area around the dislocation, there exits stress due to the lattice defects. At the area, diffusivity is kwon to increase due to such stress induced by the lattice defects, which is called pipe-diffusion. By using the phenomena, we can fabricate nano-wires around the dislocation core inside a bulk. In this study, we tried to fabricate the dislocation nano-wires in SrTiO3, and AlN and so on.