Basic properties of ternary group III nitride compound semiconductor non-polar surfaces

三元III族氮化物化合物半导体非极性表面的基本性质

• 批准号: 398305088
• 负责人: Professor Dr. Mario Dähne, since 5/2021
• 金额: --
• 依托单位: Institut für Festkörperphysik
• 依托单位国家: 德国
• 项目类别: Research Grants
• 财政年份: 2018
• 资助国家: 德国
• 起止时间: 2017-12-31 至 2021-12-31
• 项目状态: 已结题
• 来源: https://gepris.dfg.de/gepris/projekt/398305088?language=en
• 关键词: Basic; properties; ternary; group; III

The development of novel semiconductor devices based on wurtzite structure group III nitrides cannot rely solely on the binary compounds, i.e. GaN, AlN, and InN, since only ternary (Al,Ga,In)N compounds offer the possibility to engineer the desired electronic/optoelectronic properties. In order to control device properties in a bottom-up fashion, a detailed microscopic and spectroscopic understanding of the fundamental properties and physics of the ternary group III nitrides semiconductor materials is necessary. A direct experimental access to these properties is, however, a rather difficult task, since only surface sensitive measurements can provide such microscopic and spectroscopic information with sufficient resolution and hence bulk properties are typically hidden by non-stoichiometric ad-layers on polar group III nitride surfaces. This can be avoided by investigating non-polar surfaces, which allow for probing both bulk and surface properties. In addition, they are technologically relevant for wurtzite structure nanowires. Therefore, we propose to investigate basic properties of ternary group III nitride compound semiconductor non-polar surfaces. The objectives are to determine (i) intrinsic surface states, their spatial localization and energy levels, as well as the surface band gaps, (ii) the physical origin of the Fermi-level pinning and (iii) of electron accumulation effects, (iv) the electron affinities for the different compounds, (v) the effect of lattice strain and (vi) of doping on the basic properties, (vii) a microscopic and spectroscopic investigation of the ternary alloys to determine clustering, fluctuations, ordering, as well as growth dependent effects, and finally (viii) the analysis of defects, such as threading dislocations, steps, interface misfit dislocations, and their extrinsic states. With such a comprehensive understanding the design of electronic/optoelectronic devices based on group III nitrides can be turned much more effective.

基于纤锌矿结构III族氮化物的新型半导体器件的发展不能仅仅依赖于二元化合物，即GaN，AlN和InN，因为只有三元(Al，Ga，In)N化合物才有可能设计出所需的电子/光电性能。为了以自下而上的方式控制器件性能，有必要对三元族III氮化物半导体材料的基本性质和物理特性进行详细的微观和光谱了解。然而，对这些性质的直接实验访问是一项相当困难的任务，因为只有表面敏感的测量才能提供具有足够分辨率的这种微观和光谱信息，因此体性质通常被极性III族氮化物表面上的非化学计量比广告层所隐藏。这可以通过研究非极性表面来避免，这允许探测体属性和表面属性。此外，它们在技术上与纤锌矿结构纳米线相关。因此，我们建议研究三元族氮化物化合物半导体非极性表面的基本性质。目的是确定(I)本征表面态、它们的空间局域化和能级以及表面带隙，(Ii)费米能级钉扎的物理起源和(Iii)电子累积效应，(Iv)不同化合物的电子亲和力，(V)晶格应变和(Vi)掺杂对基本性质的影响，(Vii)三元合金的微观和光谱研究，以确定聚集、波动、有序和生长相关效应，以及(Viii)缺陷的分析，例如穿线位错、台阶、界面失配位错，以及它们的外在状态。有了这样全面的理解，基于第三族氮化物的电子/光电子器件的设计可以变得更加有效。