A study on integrated single organic semiconductor complementary transistors with top-gate structures

顶栅结构集成单有机半导体互补晶体管的研究

• 批准号: 15K13969
• 负责人: Ohmi Shun-ichiro
• 金额: $ 2.5万
• 依托单位: Tokyo Institute of Technology
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Challenging Exploratory Research
• 财政年份: 2015
• 资助国家: 日本
• 起止时间: 2015-04-01 至 2018-03-31
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-15K13969/
• 关键词: 有機半導体; 有機絶縁体; 相補型トランジスタ; 界面制御; 低仕事関数金属; 微細化; 集積化; 疑似相補型トランジスタ; しきい値制御; トップゲート構造; 窒素添加六ホウ化ランタン; ペンタセン; ルブレン

项目成果

Top-gate pentacene-based organic field-effect transistor with amorphous rubrene gate insulator

• DOI: 10.7567/jjap.57.02ca08
• 发表时间: 2018-01
• 期刊: Japanese Journal of Applied Physics
• 影响因子: 1.5
• 作者: M. Hiroki;Y. Maeda;S. Ohmi

Steep subthreshold swing of pentacene-based organic field-effect transistor with nitrogen-doped LaB6 interfacial layer

• DOI: 10.7567/jjap.56.04cl06
• 发表时间: 2017-03
• 期刊: Japanese Journal of Applied Physics
• 影响因子: 1.5
• 作者: Y. Maeda;S. Ohmi

Electron Injection of N-type Pentacene-based OFET with Nitrogen-Doped LaB6 Bottom-Contact Electrodes

氮掺杂 LaB6 底部接触电极的 N 型并五苯 OFET 的电子注入

• 发表时间: 2017
• 作者: Yasutaka Maeda;and Shun-ichiro Ohmi
• 通讯作者: and Shun-ichiro Ohmi

Effect of Nitrogen-Doped LaB6 Interfacial Layer on Device Characteristics of Pentacene-Based OFET

• DOI: 10.1587/transele.e100.c.463
• 发表时间: 2017-05
• 期刊: IEICE Trans. Electron.
• 作者: Y. Maeda;S. Ohmi;T. Goto;T. Ohmi

Influence of Surface Treatment of SiO2 Gate Insulator forPentacene-based OFETs with Nitrogen-doped LaB6 Bottom-Contact Electrode Formation Process

SiO2栅绝缘体表面处理对并五苯基OFET氮掺杂LaB6底部接触电极形成工艺的影响

• 发表时间: 2017
• 作者: Yasutaka Maeda;Mizuha Hiroki;and Shun-ichiro Ohmi
• 通讯作者: and Shun-ichiro Ohmi