Resolution and throughput scalability limits of a compact EUV nanopatterning tool - Erkenntnistransfer-Projekt

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The planned work is based on the DFG project "Realisation of artificial three-dimensional Ge-quantum dot crystals by extreme ultraviolet interference lithography and molecular-beam epitaxy". Therein developed experimental setup for laboratory-based nanostructuring with EUV radiation serves as the basis for the proposed knowledge transfer project. The setup currently allows patterning of periodic structures with a minimal half-pitch of 28 nm over large areas of several square millimeters. To the best of our knowledge this is the highest density pattern ever achieved with a laboratory interference lithography. This remarkable scientific achievement resulted in an industrial interest in this technology. The knowledge transfer in combination with the joint work program together with the industrial partner will enable further development of the patterning method and high-precision system technology. The aim is to realize minimal feature sizes of 10 nm half-pitch as requested by potential customers in preliminary enquiries. Achieving this goal is only possible by extensive work on the enhancement of the transmission mask technology, the stability and accuracy of the positioning system and the design of a highly effective illumination system.The joint work program will allow to determine the scientific and technical limits of the approach and to identify new application areas. Based on the results of the project the industrial partner will be qualified to fabricate a market-ready EUV nanopatterning tool.