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One-Chip RF IC Using Zero-Temperature-Coefficient SAW Devices on AlN Films.

在 AlN 薄膜上使用零温度系数 SAW 器件的单芯片 RF IC。

基本信息

批准号：
58850055
负责人：
MIKOSHIBA Nobuo
金额：
$ 11.07万
依托单位：
Tohoku University
依托单位国家：
日本
项目类别：
Grant-in-Aid for Developmental Scientific Research
财政年份：
1983
资助国家：
日本
起止时间：
1983 至 1985
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-58850055/
关键词：
ALN THIN FILM ZERO TEMPERATURE COEFFICIENT SAW

项目摘要

For a compact mobile communication, new thin-film technologies are required for integrating "zero-temperature-coefficient"surface-acoustic-wave(SAW) devices and "active" semiconductor devices into one chip, which should be called RF IC on a silicon on sapphire (SOS) or a Si substrate.We have carried out detailed and systematic studies on the one-chip RF IC using zero-temperaturecoefficient SAW devices on AlN films for three years (1983-1985). We have performed the following studies.1. We have tested the detailed qualities of AlN films for the device fabrication; (1) effects of growth temperature.(2) SAW propagation loss and dispersion vs.frequency and film thickness,(3) effects of AlN film qualities on the temperature coefficient of delay for SAW propagation,and so on.The reproducibility of zero temperature coefficient of delay for SAW propagation seems to depend on oxygen contamination in AlN film by Auger analysis,but we will need more detailed and careful studies under high-purity growth condition.2. In order to pick up the full potential of AlN film, an example of one-chip RF IC of spread spectrum demodulator was proposed. The one-chip included SAW band pass filters, SAW oscillators, SAW correlators and delay lines, amplifiers, mixers and AGC circuits with AlN-SOS combination. The AlN film growth, especially the growth temperature, should have a compatibility with silicon device fabrication process. Using a low pressure MOCVD and also a plasma enhanced MOCVD, the growth temperature has been decreased below 850 ゜C.It could be concluded that AlN film is a prospective material for thin film SAW devices and has a high potential for a one-chip RF IC such as integrated spread spectrum transciever incorporating zero-temperature-coefficient SAW correlators.

对于紧凑型移动通信，需要新的薄膜技术将“零温度系数”表面声波（SAW）器件和“有源”半导体器件集成到一块芯片上，这应该称为蓝宝石上硅（SOS）或硅衬底上的射频IC。我们对单芯片射频IC进行了详细和系统的研究，采用 AlN 薄膜上的零温度系数 SAW 器件为期三年（1983-1985）。我们进行了以下研究： 1．我们测试了用于器件制造的 AlN 薄膜的详细质量；（1）生长温度的影响。（2）SAW传播损耗和色散与频率和薄膜厚度的关系，（3）AlN薄膜质量对SAW传播延迟温度系数的影响，等等。通过俄歇分析，SAW传播延迟零温度系数的再现性似乎取决于AlN薄膜中的氧污染，但我们需要在高纯度生长条件下进行更详细和仔细的研究。2。为了充分发挥 AlN 薄膜的潜力，提出了一种扩频解调器的单芯片 RF IC 示例。该单芯片包括 SAW 带通滤波器、SAW 振荡器、SAW 相关器和延迟线、放大器、混频器以及采用 AlN-SOS 组合的 AGC 电路。 AlN薄膜的生长，特别是生长温度，应与硅器件的制造工艺相兼容。使用低压MOCVD和等离子体增强MOCVD，生长温度已降至850℃以下。可以得出结论，AlN薄膜是薄膜SAW器件的有前景的材料，并且对于单芯片RF IC（例如结合零温度系数SAW相关器的集成扩频收发器）具有很高的潜力。