Low Temperature Photo-CVD by Two-Step Excitation

两步激发低温光化学气相沉积

• 批准号: 58420027
• 负责人: MIKOSHIBA Nobuo
• 金额: $ 22.66万
• 依托单位: Tohoku University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for General Scientific Research (A)
• 财政年份: 1983
• 资助国家: 日本
• 起止时间: 1983 至 1985
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-58420027/
• 关键词: Two-Step Excitation; Photo-CVD; 低温プロセス

In LSI process, low temperature CVD technologies of metal, insulator, and semiconductor films without charged particle damage are required. In order to deposite high quality and high density thin films at low temperatures, a gas phase excitation and a surface reaction must be separated and independently controlled. We proposed a "Hybrid-Excitation CVD (HE-CVD)" in which plasma is used for a gas phase excitation and UV light irradiation for a surface reaction. We have carried out detailed studies on HE-CVD for aluminum deposition for three years (1983-1985) and obtained the following results.(1) We measured the UV absorption spectrum of trimethyl-aluminum(TMA). We decided to use a Xe lamp for HE-CVD.(2) We have investigated a vapor decomposition mechanism of TMA. In order to obtaine A1 films without carbon incorporation, it must be necessary to use hydrogen which reacts with methyl radical to generate methane. The excitation method which can produce ethane would decrease carbon incorporation. Ethane could be generated in photolysis.(3) We have constructed HE-CVD apparatus. Using TMA and hydrogen, high purity Al films without carbon incorporation were deposited on silicon wafers at 250゜C. It was concluded that high quality Al films were deposited by the Hybrid-Excitation CVD at low temperatures. The Hybrid-Excitation CVD method has a potential for deposition of interconnection metals in VLSI technology and for deposition of insulator films.

在大规模集成电路工艺中，需要无带电粒子损伤的金属、绝缘体和半导体薄膜的低温CVD技术。为了在低温下沉积高质量和高密度的薄膜，气相激发和表面反应必须分开并独立控制。我们提出了一种“混合激发CVD（HE-CVD）”，其中等离子体用于气相激发和UV光照射用于表面反应。1983-1985年，我们对HE-CVD沉积铝进行了三年的详细研究，取得了下列结果。(1)我们测量了三甲基铝（TMA）的紫外吸收光谱。我们决定使用白炽灯进行HE-CVD。(2)我们研究了TMA的气相分解机理。为了获得无碳结合的Al膜，必须使用氢气与甲基自由基反应生成甲烷。激发方法可以产生乙烷，从而减少碳的掺入。光分解可产生乙烷。(3)我们已经建立了HE-CVD装置。使用TMA和氢气，在250 ℃下在硅晶片上沉积没有碳结合的高纯Al膜。结果表明，混合激发CVD法在低温下沉积出了高质量的Al膜。混合激发CVD方法具有在超大规模集成电路技术中沉积互连金属和沉积绝缘膜的潜力。