ION BEAM INDUCED CHEMICAL EFFECT AND DEVELOPMENT OF MASKLEDD THIN LAYER FORMATION TECHNOLOGY

建立了聚焦离子束无掩模沉积装置，研究离子束在固体表面和纽比表面的化学效应，为无掩模沉积金属薄膜奠定基础。一个瞬态光学多通道分析仪，一个Reama scsttering设备，和一个四极质量分析仪habe贝尔安装在沉积设施进行原位监测束流诱导的化学效应。用聚焦离子束在W和Ta的反应气体中辐照衬底表面，成功地沉积了W和Ta导电薄层。通过原位监测和沉积膜的质量来优化沉积传导。精细patterms，划定的maskledd depositon设施，适用于栅电极，布线，轴射线和离子束光刻掩模。进一步比较了离子束和激光诱导化学反应沉积的薄膜质量。结果表明，离子束诱导掩模薄膜在许多方面上级激光束。

A maskless deposition facility using foused ion beasm had been assembld to study ion beam induced chemical effects at and newby solid surfaced and to establish basic technologies for maskless deposition of thin metallic layeys. A transient optical multichannel analyzer, a Reama scsttering equipment, and a quadrupole mass analyzer habe bell installed in the deposition facility to perform in-situ monitoring of beam induced chemical effects. W and Ta conductive thin-lavers were successfuly deposited bu irradiating focused ion beams onto substrata surfaces in reactive gas species including W and Ta. The deposition conduction was optimized by in-situ monitoring and by the quality of the deposition films. Fine patterms, delineated by the maskledd depossiton facility, were applied to gate electrodes, wiring, ax-ray and ion beam lithography-masks. Thin film qualitied, deposited by ion beams, were further comparted with those by laser-beam induced chemical reaction. It was concluded that the ion beam induced maskledss thin film babrication was superior in verious points to laser beam provesses.