ION BEAM INDUCED CHEMICAL EFFECT AND DEVELOPMENT OF MASKLEDD THIN LAYER FORMATION TECHNOLOGY

为了研究离子束在固体表面和新表面引起的化学效应，建立了金属薄层无掩膜沉积的基础技术。在沉积设施中安装了瞬态光学多通道分析仪、Reama散射设备和四极杆质量分析仪，对光束引起的化学效应进行了现场监测。通过将聚焦离子束照射到包括W和Ta在内的反应气体中基底表面，成功地沉积了W和Ta导电薄层。通过现场监测和沉积膜的质量对沉积传导进行优化。由掩膜沉积设备描绘的精细图案被应用于栅极、布线、x射线和离子束光刻掩膜。并将离子束制备的薄膜与激光束诱导化学反应制备的薄膜进行比较。结果表明，离子束诱导的无掩膜薄膜摩擦在各方面都优于激光。

A maskless deposition facility using foused ion beasm had been assembld to study ion beam induced chemical effects at and newby solid surfaced and to establish basic technologies for maskless deposition of thin metallic layeys. A transient optical multichannel analyzer, a Reama scsttering equipment, and a quadrupole mass analyzer habe bell installed in the deposition facility to perform in-situ monitoring of beam induced chemical effects. W and Ta conductive thin-lavers were successfuly deposited bu irradiating focused ion beams onto substrata surfaces in reactive gas species including W and Ta. The deposition conduction was optimized by in-situ monitoring and by the quality of the deposition films. Fine patterms, delineated by the maskledd depossiton facility, were applied to gate electrodes, wiring, ax-ray and ion beam lithography-masks. Thin film qualitied, deposited by ion beams, were further comparted with those by laser-beam induced chemical reaction. It was concluded that the ion beam induced maskledss thin film babrication was superior in verious points to laser beam provesses.