Functionalization of ultrathin MoS_2 by defect engineering

通过缺陷工程实现超薄MoS_2的功能化

• 批准号: 406129719
• 负责人: Dr. Arkady Krasheninnikov
• 金额: --
• 依托单位: Institut für Ionenstrahlphysik und Materialforschung
• 依托单位国家: 德国
• 项目类别: Research Grants
• 财政年份: 2018
• 资助国家: 德国
• 起止时间: 2017-12-31 至 2022-12-31
• 项目状态: 已结题
• 来源: https://gepris.dfg.de/gepris/projekt/406129719?language=en
• 关键词: Functionalization; ultrathin; MoS_2; defect; engineering

The overall goal of this project is to develop strategies to functionalize 2D materials by means of ion-induced electronic excitations. The energy deposition via electronic excitations gives rise to defects which clearly differ from those created by conventional (i.e. singly charged keV) ion beams with respect to type, size and effciency. The ion-induced defects will be further modified e.g. by the adsorption of precursor gases or molecules. Our objective is to identify and quantify the relevant defect creation mechanisms by systematic experiments on single layer MoS_2 - as a representative of the material class of transition metal dichalcogenides - in combination with theoretical modelling. This approach builds the basis for effcient defect engineering strategies, i.e. it will enable us to predict and choose the optimum parameters for the controlled fabrication of a certain defect structure in a given sample. In particular, we will focus our attention on the functionalization of single layer MoS_2 for three different applications, each of which is based on a specific defect type. Based on our preliminary work these are: nanosized pores with a small size distribution suitable for water desalination or DNA sequencing, desulfurized MoS_2 nanostructures suitable for the hydrogen evolution reaction (HER), and defect engineered MoS_2 field effect transistors which may be used as optoelectronic switches.

这个项目的总体目标是开发通过离子诱导电子激发使2D材料功能化的策略。电子激发引起的能量沉积产生的缺陷在类型、大小和效率上都明显不同于传统的(即单电荷kev)离子束。离子引起的缺陷将被进一步修饰，例如通过对前体气体或分子的吸附。我们的目标是通过对单层MoS_2的系统实验，结合理论模拟，识别和量化相关的缺陷产生机制。这种方法为有效的缺陷工程策略奠定了基础，即它将使我们能够预测和选择在给定样本中控制制造特定缺陷结构的最佳参数。特别是，我们将重点关注单层MoS_2在三种不同应用中的功能化，每种应用都基于特定的缺陷类型。基于我们的初步工作，它们是：适合于海水淡化或DNA测序的小尺寸分布的纳米孔，适合于析氢反应(HER)的脱硫型MoS_2纳米结构，以及可用作光电开关的缺陷工程化MoS_2场效应管。