Coherent spin dynamics of carriers and magnetic ions in semiconductor heterostructures

本计画将研究半导体异质结构中自由载子自旋与磁性离子定域自旋的相干动力学。基于III-V族和II-VI族半导体的量子威尔斯，也包括具有磁性Mn 2+离子的稀磁半导体（DMS），将通过时间分辨的泵浦-探测克尔旋转、自旋翻转拉曼散射和偏振光致发光来研究。因此，激子和三价电子态的共振激发被认为是一个重要因素。研究的一个关键需求是找出特别长寿命的电子和空穴自旋相干的条件下，在ZnSe和GaAs的外延结构的基础上，包括生长方向的作用。在基于ZnMnSe和CdMnTe的DMS结构中，将研究自旋从载流子到磁性离子的相干转移。

In this project the coherent dynamics of free carrier spins and localized spins of magnetic ions in semiconductor heterostructures will be studied. Quantum wells based on III-V and II-VI semiconductors, also including diluted magnetic semiconductors (DMS) with magnetic Mn2+ ions, will be investigated by time-resolved pump-probe Kerr rotation, spin-flip Raman scattering and polarized photoluminescence. Hereby, the resonant excitation of exciton and trion states is regarded as an important factor. A key demand of the studies is to find out the conditions of particularly long-lived electron and hole spin-coherence in nonmagnetic structures based on ZnSe and GaAs, including the role of the growth orientation. In DMS structures based on ZnMnSe and CdMnTe coherent transfer of spin from carriers to magnetic ions will be studied.