Exciton and carrier dynamics in indirect-band-gap semiconductor nanostructures with a type-I band alignment

具有 I 型能带排列的间接带隙半导体纳米结构中的激子和载流子动力学

• 批准号: 409810106
• 负责人: Professor Dr. Dmitri Yakovlev, Ph.D.
• 金额: --
• 依托单位: Lehrstuhl für Experimentelle Physik II
• 依托单位国家: 德国
• 项目类别: Research Grants
• 财政年份: 2019
• 资助国家: 德国
• 起止时间: 2018-12-31 至 2022-12-31
• 项目状态: 已结题
• 来源: https://gepris.dfg.de/gepris/projekt/409810106?language=en
• 关键词: Exciton; carrier; dynamics; indirect; band

A novel class of semiconductor nanostructures, in particular quantum dots and quantum wells, with a type-I band alignment and an indirect band gap in the momentum space will be investigated. The nanostructures will be fabricated from various III-V materials, and different kinds of optical as well as magneto-optical techniques shall be used to examine their electronic band structure and the mechanisms of electron and exciton energy and spin relaxation and recombination. Special attention will be drawn to the scenarios where the direct Gamma valley of the conduction band electrons is tuned by the spatial confinement to the energy of the indirect X or L valley. The resultant Gamma-X and Gamma-L mixed electron states are expected to strongly modify the recombination and spin dynamics of the indirect excitons and carriers. Theoretical models of the mixed electron states, their wave functions and matrix elements for optical transitions will be developed; in that context, model calculations of the electronic structures will be performed.

本文将研究一类新型的半导体纳米结构，特别是量子点和量子阱，在动量空间中具有i型带对准和间接带隙。利用不同的III-V材料和不同的光学和磁光技术制备纳米结构，研究其电子能带结构、电子和激子能量、自旋弛豫和复合机制。特别注意的是，导带电子的直接伽玛谷被空间限制到间接的X或L谷的能量而调谐。由此产生的γ - x和γ - l混合电子态有望强烈地改变间接激子和载流子的复合和自旋动力学。建立混合电子态及其波函数和光学跃迁矩阵元素的理论模型；在这种情况下，将进行电子结构的模型计算。