Exciton and carrier dynamics in indirect-band-gap semiconductor nanostructures with a type-I band alignment

具有 I 型能带排列的间接带隙半导体纳米结构中的激子和载流子动力学

• 批准号: 409810106
• 负责人: Professor Dr. Dmitri Yakovlev, Ph.D.
• 金额: --
• 依托单位: Lehrstuhl für Experimentelle Physik II
• 依托单位国家: 德国
• 项目类别: Research Grants
• 财政年份: 2019
• 资助国家: 德国
• 起止时间: 2018-12-31 至 2022-12-31
• 项目状态: 已结题
• 来源: https://gepris.dfg.de/gepris/projekt/409810106?language=en
• 关键词: Exciton; carrier; dynamics; indirect; band

A novel class of semiconductor nanostructures, in particular quantum dots and quantum wells, with a type-I band alignment and an indirect band gap in the momentum space will be investigated. The nanostructures will be fabricated from various III-V materials, and different kinds of optical as well as magneto-optical techniques shall be used to examine their electronic band structure and the mechanisms of electron and exciton energy and spin relaxation and recombination. Special attention will be drawn to the scenarios where the direct Gamma valley of the conduction band electrons is tuned by the spatial confinement to the energy of the indirect X or L valley. The resultant Gamma-X and Gamma-L mixed electron states are expected to strongly modify the recombination and spin dynamics of the indirect excitons and carriers. Theoretical models of the mixed electron states, their wave functions and matrix elements for optical transitions will be developed; in that context, model calculations of the electronic structures will be performed.

我们将研究一类新型的半导体奈米结构，特别是量子点和量子威尔斯，在动量空间中具有I型能带排列和间接带隙。纳米结构将由各种III-V族材料制成，并且将使用不同种类的光学和磁光技术来检查它们的电子能带结构以及电子和激子能量和自旋弛豫和复合的机制。将特别注意的情况下，直接伽马谷的导带电子被调谐的空间限制的能量的间接X或L谷。由此产生的Gamma-X和Gamma-L混合电子状态预计将强烈修改间接激子和载流子的复合和自旋动力学。将开发混合电子态的理论模型，它们的波函数和光学跃迁的矩阵元素;在这种情况下，将进行电子结构的模型计算。