Experimental verification of the Spin Gunn Effect

在高电场作用下，通过GaAs或InP等n型半导体的电荷域的形成和迁移导致了已建立的Gunn效应。提出这种现象与自旋有关，并导致自旋极化畴在材料中运动。这被称为自旋枪效应。本项目拟通过实验验证自旋冈恩效应的存在性，并对其动力学进行研究。脉冲核磁共振方案将用于测量由自旋极化电子域通过引起的动态核极化。

The formation and transit of charge domains through n-type semiconductors like GaAs or InP at high electric fields lead to the established Gunn effect. It is proposed that this phenomenon is spin dependent and leads to spin polarized domains moving through the material. This is termed the Spin Gunn Effect. This project proposes to verify experimentally the existence of the spin Gunn effect and to investigate its dynamics. A pulsed NMR scheme will be used to measure the Dynamic Nuclear Polarization induced by the passage of the spin polarized electron domains.