Experimental verification of the Spin Gunn Effect

自旋冈恩效应的实验验证

• 批准号: 40997636
• 负责人: Professor Dr. Gert Denninger
• 金额: --
• 依托单位: 2. Physikalisches Institut
• 依托单位国家: 德国
• 项目类别: Priority Programmes
• 财政年份: 2007
• 资助国家: 德国
• 起止时间: 2006-12-31 至 2010-12-31
• 项目状态: 已结题
• 来源: https://gepris.dfg.de/gepris/projekt/40997636?language=en
• 关键词: Experimental; verification; Spin; Gunn; Effect

The formation and transit of charge domains through n-type semiconductors like GaAs or InP at high electric fields lead to the established Gunn effect. It is proposed that this phenomenon is spin dependent and leads to spin polarized domains moving through the material. This is termed the Spin Gunn Effect. This project proposes to verify experimentally the existence of the spin Gunn effect and to investigate its dynamics. A pulsed NMR scheme will be used to measure the Dynamic Nuclear Polarization induced by the passage of the spin polarized electron domains.

在高电场下，电荷域通过 GaAs 或 InP 等 n 型半导体的形成和传输导致了已建立的耿氏效应。有人提出，这种现象是自旋相关的，并导致自旋极化域在材料中移动。这被称为旋转冈恩效应。该项目拟通过实验验证自旋耿恩效应的存在并研究其动力学。脉冲核磁共振方案将用于测量由自旋极化电子域的通过引起的动态核极化。