Experimental verification of the Spin Gunn Effect

在高电场作用下，电荷域在像GaAs或InP这样的n型半导体中的形成和迁移导致了已建立的Gunn效应。这种现象是自旋相关的，并导致自旋极化域在材料中移动。这被称为自旋冈恩效应。这个项目建议从实验上证实自旋冈恩效应的存在，并研究其动力学。脉冲核磁共振方案将被用来测量由自旋极化电子域的通过而引起的动态核极化。

The formation and transit of charge domains through n-type semiconductors like GaAs or InP at high electric fields lead to the established Gunn effect. It is proposed that this phenomenon is spin dependent and leads to spin polarized domains moving through the material. This is termed the Spin Gunn Effect. This project proposes to verify experimentally the existence of the spin Gunn effect and to investigate its dynamics. A pulsed NMR scheme will be used to measure the Dynamic Nuclear Polarization induced by the passage of the spin polarized electron domains.