Dislocation-based functionality in oxides

位错的传统观点是金属塑性变形的载体。相反，氧化物中的位错也可能带电。由于这些位错的低迁移率，电荷及其补偿空间电荷（准一维掺杂）可以锁定在空间中，直至高温。如果成功，该项目将为功能性陶瓷的设计空间提供另一个维度。所有材料的潜力最终将与传统的0-dim一起被开发出来。（元素掺杂），2-dim（晶界设计），3-dim。（第二相夹杂物）缺陷。机械诱导的位错掺杂会导致与位错平行的反应中心和导电路径，以及垂直于位错的电散射和热散射中心。与铁电畴壁的静电相互作用为材料设计提供了新的机会。然而，这些新设计的特性只有在处理策略可以在大块氧化物中产生位错的情况下才能获得。除了单晶的塑性变形外，还将考虑电场作用下多晶中的位错蠕变，以及表面和氧化还原技术。

The traditional view of dislocations is that of a vehicle for plastic deformation in metals. In contrast, dislocations in oxides can also be heavily charged. By virtue of the low mobility of these dislocations, the charge and its compensating space charge (a quasi - one-dimensional dopant) can be locked into space, up to high temperatures. If successful, this project will offer another dimension in design space for functional ceramics. The full materials’ potential will finally be exploited, together with traditional 0-dim. (elemental doping), 2-dim. (grain boundary design), and 3-dim. (second phase inclusions) defects. Mechanically-induced doping with dislocations leads to reactive centers and conducting paths parallel to the dislocation and to electrical and thermal scattering centers perpendicular to it. An electrostatic interaction with ferroelectric domain walls provides novel opportunities for material design. These new designed properties, however, can only be harvested if processing strategies can be made available to generate dislocations in bulk oxides. Next to plastic deformation of single crystals, dislocation creep in polycrystals with electric field, as well as surface and redox techniques, will be considered.