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Electronic Properties of Nanoscale Metal/Silicon Interfaces and of Low-Dimensional Metal Clusters on Silicon Surfaces under Electrochemical Conditions

电化学条件下纳米级金属/硅界面和硅表面低维金属簇的电子特性

基本信息

批准号：
41836549
负责人：
Privatdozent Dr. Werner Schindler
金额：
--
依托单位：
Chemische Physik fern des Gleichgewichts
依托单位国家：
德国
项目类别：
Research Grants
财政年份：
2007
资助国家：
德国
起止时间：
2006-12-31 至 2010-12-31
项目状态：
已结题

来源：
https://gepris.dfg.de/gepris/projekt/41836549?language=en
关键词：
Electronic Properties Nanoscale Metal Silicon

项目摘要

The project will first be concerned with the preparation and investigation of the electronic properties of nanoscale metal / n-Si (111), (110), and (100) interfaces for metal cluster, i. e. contact, diameters below 20 nm, preferably between 0.3 and 5 nm. Co, Pb, Cu and Au clusters as examples for magnetic/non - magnetic metals and systems with Nernst potentials below, around, and above the n-Si flatband potentials shall be investigated. Based on these results, the electronic properties of metal cluster/n-Si interfaces (at electron accumulation or depletion in the n-Si space charge layer) shall be exploited to precisely adjust the coupling of the electron system of individual metal clusters to their n-Si substrate. Thus, the electronic properties of individual, low-dimensional metal clusters due to a variation in the electronic coupling to a substrate shall be studied. Preparation and all investigations will be performed in-situ at solid/liquid interfaces at utmost cleanliness conditions, in electrolytes using anions which do not adsorb specifically, in deaerated electrolytes, and in the dark . The preparation of metal clusters will be achieved by localized and delocalized electrodeposition. The techniques applied for the investigations will be in-situ Scanning Tunneling Microscopy (STM), in-situ Distance and Voltage Tunneling Spectroscopy (DTS and VTS), in-situ electron transport measurements utilizing quantized conductance channels between tunneling microscope tip and metal cluster, as well as theoretical modelling of the space charge layer underneath the nanoscale metal clusters and of electronically isolated metal clusters. A comprehensive understanding of the electronic properties of individual nanoscale Schottky contacts shall be derived, interaction effects shall be investigated by studding different ensembles of a few nanodiodes fabricated with denned size and distances by localized electrodeposition, and the applicability of the thermionic emission model shall be tested by appropriate calculations of current/voltage curves. The effects of various adsorbed molecules on the measurements shall be studied by choosing several model molecules. Electronic properties of single metal clusters at denned, but variing electronic coupling to their n-Si substrate shall be investigated by in-situ tunneling spectroscopy, eventually in non-aqueous electrolytes which provide an increased double layer range available for voltage tunneling spectroscopy. Major impacts of the results of this project are expected in the fields of, e. g., nanoelectronics, catalysis, or nanoscale sensor applications.

本计画将首先研究奈米金属/ n-Si（111）、（110）、（100）界面金属团簇的制备与电子性质。e.接触，直径低于20 nm，优选在0.3和5 nm之间。将研究Co、Pb、Cu和Au团簇作为磁性/非磁性金属和系统的例子，这些金属和系统的能斯特电位低于、接近和高于n-Si平带电位。基于这些结果，金属团簇/n-Si界面的电子性质（在n-Si空间电荷层中的电子积累或耗尽时）将被利用以精确地调节单个金属团簇的电子系统与其n-Si衬底的耦合。因此，个别的，低维的金属簇的电子性质，由于电子耦合到基板的变化应进行研究。制备和所有研究将在最高清洁度条件下的固/液界面、使用非特异性吸附阴离子的电解质、脱气电解质和黑暗中原位进行。金属团簇的制备可以通过定域和离域电沉积来实现。适用于调查的技术将是在原位扫描隧道显微镜（STM），在原位距离和电压隧道显微镜光谱学（MTS和VTS），在原位电子传输测量利用隧道显微镜尖端和金属簇之间的量子化电导通道，以及纳米级金属簇和电子隔离金属簇下面的空间电荷层的理论建模。应获得对单个纳米级肖特基接触的电子特性的全面理解，应通过研究由局部电沉积制造的具有指定尺寸和距离的几个纳米二极管的不同集合来研究相互作用效应，并应通过适当计算电流/电压曲线来测试电子发射模型的适用性。应通过选择几种模型分子来研究各种吸附分子对测量的影响。单金属簇的电子性质，但不同的电子耦合到他们的n-Si衬底应在原位隧道光谱研究，最终在非水电解质，提供了一个增加的双层范围可用于电压隧道光谱。该项目的成果预计将在以下领域产生重大影响：例如，在一个实施例中，纳米电子学、催化或纳米级传感器应用。