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Energetic alignment of buried junctions and tailored interfaces in photoelectrochemical multi-junction devices

Energetic alignment of buried junctions and tailored interfaces in photoelectrochemical multi-junction devices
光电化学多结器件中掩埋结和定制界面的能量对准
批准号:
424924805
负责人:
Professor Dr. Thomas Hannappel
金额:
$0.0万
依托单位国家:
德国
项目类别:
Research Grants
财政年份:
2019
资助国家:
德国
项目状态:
已结题
起止时间:
2018-12-31 至 2022-12-31

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中文摘要
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英文摘要
This project seeks to elucidate the electronic structure and energetic band alignment at the hetero-interfaces of photoelectrochemical multi-junction devices. Comprehension of the band energy diagrams of photoelectrochemical devices in the vicinity of the electrolyte with respect to their relative energetic position as well as the formation of electronic surface states will help to understand efficiency-limiting factors of the overall device. The coupling of absorbers to chemical and electronic passivation layers as well as co-catalysts will be systematically studied, primarily by electrochemical methods coupled in-vacuo to photoelectron spectroscopy. Density functional theory will allow an in-depth interpretation of experimental data, finally providing an atomistic view on the origin of energetic alignments. As the elementary processes of light absorption, charge-separation and -transfer, as well as multi-electron catalysis are highly interrelated, we will focus on two established water splitting multi-junction devices that have already demonstrated high efficiencies, but still have not reached the physical limits: silicon-based multi-junction as well as III-V compound semiconductor-based tandem cells. The hereby identified routes to modify the electronic coupling of the hetero-interfaces will, in close cooperation with the other partners, also be studied and evaluated under operating conditions. For the long-term perspective of the Research Consortium, this project will provide generalised research approaches that can be transferred to other high-efficiency multi-junction systems.
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Charge Carrier Transport Analysis in Radial and Axial Charge-Separating Junctions of III/V Semiconductor Nanowires
Formation of heterovalent interfaces: A combined photoemission and ab initio DFT study of GaP/Si heterostructures
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  • 项目类别:
    Research Grants
  • 资助金额:
    $0.0万
  • 财政年份:
    2018
  • 负责人:
    Professor Dr. Thomas Hannappel
  • 依托单位:
Impact of surface modification on charge carrier transport in axial GaAs nanowire structures
NSF-DFG Echem: Photocatalytic Organic Synthesis By High-Efficiency Planar Semiconductors
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