In-situ characterization of MOVPE growth dynamics and of diffusion mechanisms in nitrides and their influence on optoelectronic properties of InGaN/AlGaN/GaN quantum structures

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Non-uniform indium concentration is the major unsolved scientific problem strongly impeding technological progress in the growth of the InGaAlN materials system. The goal of the project is to gain a fundamental understanding of the growth and decomposition of InGaN/GaN produced by metalorganic vapor phase epitaxy (MOVPE), thus enabling optimization of the growth parameters for fabrication of InGaN/AlGaN quantum structures of blue and green LEDs and laser diodes. In particular, we want to elucidate the microscopic mechanisms of indium diffusion in the AlInGaN lattice in dependence on external parameters (especially temperature) and internal influences, such as lattice strain fields and defect type and concentrations at the moment (and temperature) of growth, which beside piezoelectric fields are important for the fundamental understanding of growth. Also, they are crucial unknown factors with implication on the technology of nitride devices- LEDs, lasers and transistors.