In-situ characterization of MOVPE growth dynamics and of diffusion mechanisms in nitrides and their influence on optoelectronic properties of InGaN/AlGaN/GaN quantum structures

MOVPE 生长动力学和氮化物扩散机制的原位表征及其对 InGaN/AlGaN/GaN 量子结构光电性能的影响

• 批准号: 426532685
• 负责人: Professor Dr. Tilo Baumbach
• 金额: --
• 依托单位: Institute of High Pressure Physics
• 依托单位国家: 德国
• 项目类别: Research Grants
• 财政年份: 2019
• 资助国家: 德国
• 起止时间: 2018-12-31 至 2023-12-31
• 项目状态: 已结题
• 来源: https://gepris.dfg.de/gepris/projekt/426532685?language=en
• 关键词: situ; characterization; MOVPE; growth; dynamics

Non-uniform indium concentration is the major unsolved scientific problem strongly impeding technological progress in the growth of the InGaAlN materials system. The goal of the project is to gain a fundamental understanding of the growth and decomposition of InGaN/GaN produced by metalorganic vapor phase epitaxy (MOVPE), thus enabling optimization of the growth parameters for fabrication of InGaN/AlGaN quantum structures of blue and green LEDs and laser diodes. In particular, we want to elucidate the microscopic mechanisms of indium diffusion in the AlInGaN lattice in dependence on external parameters (especially temperature) and internal influences, such as lattice strain fields and defect type and concentrations at the moment (and temperature) of growth, which beside piezoelectric fields are important for the fundamental understanding of growth. Also, they are crucial unknown factors with implication on the technology of nitride devices- LEDs, lasers and transistors.

铟浓度的不均匀性一直是制约InGaAlN材料生长技术进步的主要科学难题。该项目的目标是获得的生长和分解的InGaN/GaN的金属有机气相外延（MOVPE）生产的基本理解，从而使生长参数的优化，用于制造蓝色和绿色LED和激光二极管的InGaN/AlGaN量子结构。特别是，我们要阐明铟扩散在AlInGaN晶格中的微观机制依赖于外部参数（特别是温度）和内部影响，如晶格应变场和缺陷类型和浓度的时刻（和温度）的增长，旁边的压电场是重要的基本理解的增长。此外，它们是关键的未知因素，对氮化物器件（LED、激光器和晶体管）的技术有影响。