Integrated Transceivers for 5G Mobile Communications in a strained GaN-HEMT Technology

采用应变 GaN-HEMT 技术的 5G 移动通信集成收发器

• 批准号: 426573565
• 负责人: Professor Dr.-Ing. Matthias Rudolph
• 金额: --
• 依托单位: Ferdinand-Braun-Institut gGmbH, Leibniz-Institut für Höchstfrequenztechnik (FBH)
• 依托单位国家: 德国
• 项目类别: Research Grants
• 财政年份: 2019
• 资助国家: 德国
• 起止时间: 2018-12-31 至 2023-12-31
• 项目状态: 已结题
• 来源: https://gepris.dfg.de/gepris/projekt/426573565?language=en
• 关键词: Integrated; Transceivers; 5G; Mobile; Communications

Future mobile communications require higher preformance radio frontends. Especially concerning mobile base stations, further miniaturisation and reduction of energy consumption is required together with higher linearity and bandwidth. GaN-based integrated circuits are the technology of choice for these applications due to their capability to combine high-power with low-noise applications. But typical GaN technologies today are optimized for classical power amplification applications. This project approaches three open questions regarding an optimized single-chip radio frontend implementation. First, it is investigated how GaN HEMT transistors can be optimized to a specific application by applying strain to the device‘s channel. The goal is to explain which kind of strain yields optimized noise or switching behavior, and how this could be realized locally on a common chip. Such a technology enables new approaches and circuit topologies for digital power amplifiers, which is the second focus of this project. Also on the reciver side, low noise amplifiers could profit from a strained GaN channel technology, if HEMTs are optimized for low noise and the rugged low-noise amplifier itself protects subsequent electronics against high incident powers. Combining these three topics into one project enables a comprehensive investigation and should enable the realization of a demonstrator chip.

未来的移动的通信需要更高性能的无线电前端。特别是关于移动的基站，需要进一步的简化和能量消耗的减少以及更高的线性度和带宽。基于GaN的集成电路由于其将高功率与低噪声应用联合收割机相结合的能力而成为这些应用的选择技术。但如今典型的GaN技术针对经典功率放大应用进行了优化。该项目的方法三个开放的问题，关于一个优化的单芯片无线电前端实现。首先，研究如何通过对器件沟道施加应变来优化GaN HEMT晶体管以适应特定应用。我们的目标是解释哪种应变产生优化的噪声或开关行为，以及如何在一个共同的芯片上实现这一点。这种技术为数字功率放大器提供了新的方法和电路拓扑，这是本项目的第二个重点。同样在接收器侧，如果HEMT针对低噪声进行优化，并且坚固的低噪声放大器本身保护后续电子器件免受高入射功率的影响，则低噪声放大器可以从应变GaN沟道技术中获益。将这三个主题结合到一个项目中，可以进行全面的调查，并应能够实现演示芯片。