Electronic structure of graphene/Ge systems with tailored interfaces

具有定制界面的石墨烯/Ge系统的电子结构

• 批准号: 428756509
• 负责人: Professor Dr. Mikhail Fonin
• 金额: --
• 依托单位: Arbeitsgruppe Magnetische Materialien und Spintronik
• 依托单位国家: 德国
• 项目类别: Research Grants
• 财政年份: 2019
• 资助国家: 德国
• 起止时间: 2018-12-31 至 2023-12-31
• 项目状态: 已结题
• 来源: https://gepris.dfg.de/gepris/projekt/428756509?language=en
• 关键词: Electronic; structure; graphene; Ge; systems

The goal of the present project is to study the structure and electronic properties of a graphene layer on Ge substrates. Here the two common surfaces will be used, (110) and (100). Up to now the electronic structure of these new objects was not addressed at all. The next step is the modification of the graphene/Ge interface via placing different interlayers, like oxygen and thin layers of oxide, with the aim to decouple graphene from substrate and to tailor the properties of graphene. The effect of the substrate will be studied via combination of structural methods (LEED, STM/AFM) and photoelectron spectroscopy (NEXAFS, XPS, ARPES). Theoretical calculations of the studied objects will give us a support in the understanding of the observed phenomena as well as will guide us to the new interesting phenomena in these systems. In the end of the project, the fabrication of the prototype elements is planned and the electronic properties of such objects will be studied, by means of XPS and NEXAFS, under conditions which model the ambient environment as well as in operando conditions.

本项目的目标是研究Ge衬底上石墨烯层的结构和电子性质。这里将使用两个公共表面（110）和（100）。到目前为止，这些新物体的电子结构还没有得到解决。下一步是通过放置不同的中间层（如氧和氧化物薄层）来修饰石墨烯/Ge界面，目的是将石墨烯与衬底解耦并定制石墨烯的特性。将通过结构方法（LEED、STM/AFM）和光电子能谱（NEXAFS、XPS、ARPES）的组合来研究衬底的影响。对所研究对象的理论计算将为我们理解所观察到的现象提供支持，并将引导我们发现这些系统中新的有趣现象。在该项目结束时，计划制造原型元件，并将在模拟周围环境的条件下以及在操作条件下，利用XPS和NEXAFS研究这类物体的电子特性。