Chemical Routes to CuI and Related Compounds as Thin Films and Bulk Material

作为薄膜和散装材料的 CuI 和相关化合物的化学路线

• 批准号: 428910898
• 负责人: Professor Dr. Harald Krautscheid
• 金额: --
• 依托单位: Institut für Anorganische Chemie
• 依托单位国家: 德国
• 项目类别: Research Units
• 资助国家: 德国
• 项目状态: 未结题
• 来源: https://gepris.dfg.de/gepris/projekt/428910898?language=en
• 关键词: Chemical; Routes; CuI; Related; Compounds

Copper(I) iodide (CuI) is a p-type semiconductor with a large band gap and high (hole) conductivity, at the same time CuI is transparent in the visible spectral range. Therefore, with respect to its use in (transparent) electronics, there is currently great interest in p-type-CuI as thin films. Within the Research Unit FOR 2857, the focus of this project is on various chemical synthesis routes for the preparation of thin films as well as single crystals of CuI. In line with the optimization of layer homogeneity and surface morphology, investigations on the targeted control of material properties by doping and solid solution formation with related compounds are being advanced. Thin film formation with control of material properties will be studied by the different possibilities of metal-organic chemical vapor deposition (MOCVD) and close-distance sublimation (CDS). Fundamental investigations concern the influence of dopant sources, substrate, synthesis conditions during the growth process and post-treatment on optical, electrical and mechanical properties of the obtained crystalline and epitaxial CuI thin films. For comparative studies of strain-free doped CuI single crystals as well as CuI-based mixed crystals will be grown. By combining the different processes and materials, the fabrication of defined p-n junctions based on CuI will be investigated.

碘化铜（I）（CuI）是一种p型半导体，具有大带隙和高（空穴）电导率，同时CuI在可见光谱范围内是透明的。因此，关于其在（透明）电子学中的用途，目前对p型CuI作为薄膜存在极大兴趣。在FOR 2857研究单元内，该项目的重点是制备CuI薄膜和单晶的各种化学合成路线。在优化层的均匀性和表面形态，通过掺杂和固溶体形成与相关化合物的材料性能的有针对性的控制的调查正在推进。薄膜的形成与控制的材料特性将研究的不同可能性的金属有机化学气相沉积（MOCVD）和近距离升华（CDS）。基本调查关注的掺杂剂源，衬底，合成条件在生长过程中和后处理的光学，电学和机械性能的影响所获得的结晶和外延CuI薄膜。为了比较无应变掺杂的CuI单晶以及基于CuI的混合晶体的研究，将生长。通过结合不同的工艺和材料，基于CuI的定义的p-n结的制造将被研究。