Study of Long Wavelength Semiconductor Lasers by EMF Excitation

受激带间朗道发射是由电子和空穴在量子极限下受jxh力的激发而产生的，在4.2 - 135 K的n型InSb体中发现，当通过电流密度J时，在V - I曲线上伴随着电流饱和，例如在80 K时，垂直于外加磁场H，当H = 7 T时，电流密度J低至1640 a /cm^2。被激发的电子和空穴几乎被填充在最低朗道能级上，在电流密度高于阈值Jc时产生反向填充。然后，在带边（k_z= 0）处，朗道发射的增益g （omega， H）在（O_+ -> O‘）和（O_<_> -> O’）跃迁中具有发散性的高值，很好地解释了Jc的极小值。偏振测量结果表明，样品中的异常模式是受选择性放大的有利模式。在室温下，在6 T以上的高磁场中也观察到类似的朗道辐射，由此确定了InSb在室温下的能带参数，如epislon_g = 0.18 eV, m^* _1(0)= 0.015 m_o和g_1(O)= -47。对于Hg_<0.8>Cd_<0.2>Te，也证实了类似的现象，但量子效率约为InSb样品的1/20。

Stimulated, interband Landau emission originating from the excitation of electrons and holes by the action of the J X H force at the quantum limit has been discovered in bulk n-type InSb at 4.2 - 135 K, accompanied by a current saturation in the V - I curve, when passing a current density J, as low as 1640 A/cm^2 for H = 7 T at 80 K for example, in perpendicular to the applied magnetic field H.At the quantum limit, the excited electrons and holes are almost populated in the lowest Landau levels yielding the inverted population at the current densities above the threshold value Jc. Then, the gain, g (omega, H), of the Landau emission at the band edge (k_z= 0) has been shown to be divergently high value for the (O_+ -> O') and (O_<_> -> O') transitions, explaining well such an extremely small value of Jc.The polarization measurements have revealed that the extraordinary mode is the favorable one to suffer the selective amplifier in the sample.The similar Landau emission has also been observed at room temperature in high magnetic fields above 6 T, from which the band parameters, such as epislon_g = 0.18 eV, m^* _1(0)= 0.015 m_o and g_1(O)= -47, have been determined for InSb at room temperature.The similar phenomena have been verified for Hg_<0.8>Cd_<0.2>Te, but with the quantum efficiency of about 1/20 of InSb samples.