Study of Long Wavelength Semiconductor Lasers by EMF Excitation

在4.2 - 135 K的n型InSb中发现了受激带间朗道发射，该发射起源于量子极限下J × H力的作用对电子和空穴的激发，并伴随着V-I曲线中的电流饱和，例如，当电流密度J低至1640 A/cm ^2（H = 7 T，80 K）时，在量子极限处，激发的电子和空穴几乎在最低的朗道能级中布居，从而在高于阈值Jc的电流密度处产生反转布居。在（O_+ -&gt; O '）和（O_-&gt; O'）跃迁中，带边朗道发射的增益g（ω，H）是发散性的高值，很<_>好地解释了J_c如此之小的原因。偏振测量表明，非寻常模是样品中发生选择性放大的有利模。在室温下，在高于6 T的强磁场中，也观察到了类似的朗道发射，由此可以计算出谱带参数epislon_g = 0.18 eV，在室温下测得InSb的量子效率为0.015m_0和g_1（O）=-47，在Hg_ Cd_ Te中也证实了类似的现象<0.8><0.2>，但量子效率只有InSb的1/20。

Stimulated, interband Landau emission originating from the excitation of electrons and holes by the action of the J X H force at the quantum limit has been discovered in bulk n-type InSb at 4.2 - 135 K, accompanied by a current saturation in the V - I curve, when passing a current density J, as low as 1640 A/cm^2 for H = 7 T at 80 K for example, in perpendicular to the applied magnetic field H.At the quantum limit, the excited electrons and holes are almost populated in the lowest Landau levels yielding the inverted population at the current densities above the threshold value Jc. Then, the gain, g (omega, H), of the Landau emission at the band edge (k_z= 0) has been shown to be divergently high value for the (O_+ -> O') and (O_<_> -> O') transitions, explaining well such an extremely small value of Jc.The polarization measurements have revealed that the extraordinary mode is the favorable one to suffer the selective amplifier in the sample.The similar Landau emission has also been observed at room temperature in high magnetic fields above 6 T, from which the band parameters, such as epislon_g = 0.18 eV, m^* _1(0)= 0.015 m_o and g_1(O)= -47, have been determined for InSb at room temperature.The similar phenomena have been verified for Hg_<0.8>Cd_<0.2>Te, but with the quantum efficiency of about 1/20 of InSb samples.