Realization of Room-temperature Superconductivity with LB film
Realization of Room-temperature Superconductivity with LB film
批准号:
03452152
负责人:
SEKINE Matsuo
金额:
$3.07万
依托单位国家:
日本
项目类别:
Grant-in-Aid for General Scientific Research (B)
财政年份:
1991
资助国家:
日本
项目状态:
已结题
起止时间:
1991 至 1993
中文摘要
本研究的目的是检验一种新的超导电性机制,该机制是基于电子-空穴“库珀对”的思想从理论上预测的,这种“库珀对”在空间上被非常薄的绝缘层隔开。本研究的魅力在于采用LB膜作为绝缘层。LB膜使我们能够容易地控制绝缘层的厚度。器件结构为(n型半导体)/LB膜/(p型半导体)。作为LB膜,使用花生酸。作为一对电极,我们首先使用Bi_2Te_3族或Bi-Sn合金的热电半导体。这些薄膜是通过真空蒸发沉积的。但是我们不能用我们的设备获得p型导体。接下来,我们尝试有机半导体汞和二硬脂基百草枯分别作为p型和n型层,其通过LB方法沉积。另一方面,我们尝试将n型硅片与覆盖有SiO_2层的p型硅片面对面贴合,制作(n型硅片)/SiO_2/(p型硅片)器件。但由于两个电极之间存在针孔,因此无法得到我们所希望的器件。我们还尝试制作了非常窄的空间带隙来代替上述SiO_2层。但差距宽度不够窄,不足以引起我们的现象。最后我们制作了(p型Si片)/LB膜/(n型Bi)器件。但是我们不能在没有针孔的情况下制造这个装置。虽然补助金对科学研究的支持已经结束,但我们将检查这种超导装置的能力。
英文摘要
The purpose of this research is to examine a new mechanism of superconductivity which is theoretically predicted based on the idea of electron-hole "cooper pairs" spatially separated by a very thin insulating layr. The charm point of this research is using an LB film as the insulating layr. LB films enable us to control the thickness of the insulating layr easily. The structure of our device was (n-type semiconductor)/LB film/(p-type semiconductor). As an LB film, arachidic acid was employed. As a couple of electrodes, first we used thermoelectric semiconductors of Bi_2Te_3 family or Bi-Sn alloy. These films were deposited by the vacuum evapotration. But we could not obtain p-type conductors by our equipment. Next we tried organic semiconductors merocyanine and distearylparaquat as p- and n- type layrs, respectively, which were deposited by the LB method. These LB films, however, had low electric conductivity along layrs, which was not appropriate for our purpose.On the other hand, we tried to fabricate (n-type Si wafer)/SiO_2/(p-type Si wafer) device by attaching n-type Si wafer to p-type Si wafer covered with SiO_2 layr face to face. But the two electrodes had contact to each other by some pin-holes, so that was could not obtain the device we hope. We also tried to make very narrow spatial gap instead of SiO_2 layr mentioned above. But the gap width was not narrow enough to induce our phenomenon. Last we made (p-type Si wafer)/LB film/(n-type Bi) device. But we could not make this device without pin-holes. Although the support by Grant-in-aid for scientific research is finished, we are going to examine the ability of this type of superconducting devices.
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