Realization of Room-temperature Superconductivity with LB film

用LB薄膜实现室温超导

• 批准号: 03452152
• 负责人: SEKINE Matsuo
• 金额: $ 3.07万
• 依托单位: Tokyo Institute of Technology
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for General Scientific Research (B)
• 财政年份: 1991
• 资助国家: 日本
• 起止时间: 1991 至 1993
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-03452152/
• 关键词: room-temperature superconductivity; LB film; spatially separated electron-hole cooper pair; Bi_2Te_3 family; arachidic acid; merocyanine; distearylparaquat; Si wafer face to face attatch; 空間分離型正孔-電子対; Siウェハー張り合わせ; 超伝導; 空間分離型正孔一電子対; 空間分離型正孔ー電子対

The purpose of this research is to examine a new mechanism of superconductivity which is theoretically predicted based on the idea of electron-hole "cooper pairs" spatially separated by a very thin insulating layr. The charm point of this research is using an LB film as the insulating layr. LB films enable us to control the thickness of the insulating layr easily. The structure of our device was (n-type semiconductor)/LB film/(p-type semiconductor). As an LB film, arachidic acid was employed. As a couple of electrodes, first we used thermoelectric semiconductors of Bi_2Te_3 family or Bi-Sn alloy. These films were deposited by the vacuum evapotration. But we could not obtain p-type conductors by our equipment. Next we tried organic semiconductors merocyanine and distearylparaquat as p- and n- type layrs, respectively, which were deposited by the LB method. These LB films, however, had low electric conductivity along layrs, which was not appropriate for our purpose.On the other hand, we tried to fabricate (n-type Si wafer)/SiO_2/(p-type Si wafer) device by attaching n-type Si wafer to p-type Si wafer covered with SiO_2 layr face to face. But the two electrodes had contact to each other by some pin-holes, so that was could not obtain the device we hope. We also tried to make very narrow spatial gap instead of SiO_2 layr mentioned above. But the gap width was not narrow enough to induce our phenomenon. Last we made (p-type Si wafer)/LB film/(n-type Bi) device. But we could not make this device without pin-holes. Although the support by Grant-in-aid for scientific research is finished, we are going to examine the ability of this type of superconducting devices.

本研究的目的是检验一种新的超导机制，该机制是基于空间上由极薄绝缘层分隔的电子-空穴“铜对”的思想理论预测的。本研究的亮点在于采用LB薄膜作为绝缘层。LB薄膜使我们能够很容易地控制绝缘层的厚度。我们的器件结构为（n型半导体）/LB膜/（p型半导体）。花生酸作为LB膜。作为一对电极，我们首先使用Bi_2Te_3族热电半导体或Bi-Sn合金。这些薄膜是通过真空蒸发沉积的。但是我们的设备无法得到p型导体。接下来，我们尝试了有机半导体merocyanine和distearyl百草枯分别作为p型和n型层，用LB法沉积。然而，这些LB膜沿层的导电性较低，不适合我们的目的。另一方面，我们尝试通过将n型硅片与覆盖SiO_2层的p型硅片面对面连接来制作（n型硅片）/SiO_2/（p型硅片）器件。但是两个电极之间有一些针孔相互接触，因此无法获得我们希望的装置。我们也尝试用非常窄的空间间隙来代替上面提到的SiO_2层。但间隙宽度不够窄，不足以诱发我们的现象。最后制作了（p型硅片）/LB薄膜/（n型Bi）器件。但是我们不能没有针孔来制造这个装置。虽然科学研究补助金的支持已经结束，但我们将检验这种超导装置的能力。