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Elucidate the electrical switching phenomenon for hetero-LB film

Elucidate the electrical switching phenomenon for hetero-LB film
阐明异质LB薄膜的电开关现象
批准号:
05650004
负责人:
OHSHIMA Shigetoshi
金额:
$1.47万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for General Scientific Research (C)
财政年份:
1993
资助国家:
日本
项目状态:
已结题
起止时间:
1993 至 1994

项目摘要

项目成果

OHSHIMA Shigetoshi的其他基金

相关文献

中文摘要
翻译
研究了Cd-花生酸盐和C15 TCNQ组成的异质LB膜的电学性质、X射线衍射分析和表面形貌。结果如下。(1)通过沉积比和X射线衍射测试发现,Cd-花生酸盐LB膜为Y型结构。另一方面,C15 TCNQ LB膜从沉积率澄清为Y型或Z型结构,这取决于基底的性质(亲水性或疏水性)。(2)AFM观察到LB膜的表面形貌非常光滑。(3)用四探针法测量了异质LB膜的电学性质,其电阻值几乎与绝缘体的电阻值相当。(4)发现了异质LB膜的电开关现象。当电压施加在膜的正向或横向时,膜的电阻从高阻态(OFF态)向低阻态(ON态)转变,Cd-花生酸盐LB膜和不含Cd离子的C15 TCNQ LB膜没有出现电开关现象,而含Cd离子的C15 TCNQ LB膜出现了电开关现象。结果表明,异质LB膜的电开关现象是由Cd和C15 TCNQ的电荷转移引起的。
英文摘要
The electric properties, X-ray analysis and surface morphology of hetero LB films consisting of Cd-Arachidate and C15TCNQ were investigated. The results are as follows.(1) It was found from deposition ratio and X-ray diffraction measurement that Cd-Arachidate LB films were Y type-structure. On the other hand, C15TCNQ LB films were clarified from deposition ratio to be Y-type or Z-type structure depending on the nature (hydrophilic or hydrophobic) of the substrate.(2) The surface morphology of the LB films observed by AFM was quite smooth.(3) The electric properties of hetero LB films were measured by a four probe method, and the value of electrical resistance was almost as high as that of insulator.(4) We found the electrical switching phenomenon for the hetero LB films. The electrical resistance switches from higher resistance state (OFF state) to lower resistance state (ON state), when the voltage is applied to the normal or lateral direction of the film.The Cd-Arachidate LB films and C15TCNQ LB films without Cd ion did not show the electrical switching phenomenon, however, the C15TCNQ LB films with Cd ion showed the phenomenon. It is concluded that the electrical switching phenomenon of hetero LB films is caused by the charge -transfer of Cd and C15TCNQ.
期刊论文(8)
专著(0)
科研奖励(0)
会议论文
西田,大嶋,奥山,中島,山下: "ヘテロLB膜の作製とその電気的特性" 電気学会論文誌A. 114. 40-46 (1994)
Nishida、Oshima、Okuyama、Nakajima、Yamashita:“异质 LB 薄膜的制备及其电性能” 日本电气工程师学会会刊 A. 114. 40-46 (1994)
DOI: --
发表时间:
期刊:
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作者: []
通讯作者:
N.Nishida, S.Ohshima, K.Okuyama, K.Nakajima and T.Yamashita: "Preparation, Characterization and Electric Properties of Hetero LB Films" IEE,Japan. Vol.114. 13-19 (1994)
N.Nishida、S.Ohshima、K.Okuyama、K.Nakajima 和 T.Yamashita:“Hetero LB 薄膜的制备、表征和电性能”IEE,日本。
DOI: --
发表时间:
期刊:
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作者: []
通讯作者:
西田直樹,大嶋重利,奥山克郎,中島健介,山下努: "ヘテロLB膜の作製とその電気特性" 電気学会論文誌. 114. 13-19 (1994)
Naoki Nishida、Shigetoshi Oshima、Katsuro Okuyama、Kensuke Nakajima、Tsutomu Yamashita:“异质 LB 薄膜的制备及其电性能”日本电气工程师协会学报 114. 13-19 (1994)。
DOI: --
发表时间:
期刊:
影响因子: --
作者: []
通讯作者:
Examination of 3D-matrix superconducting micro-strip lines and its application to filters
  • 批准号:
    22560317
  • 项目类别:
    Grant-in-Aid for Scientific Research (C)
  • 资助金额:
    $3.08万
  • 财政年份:
    2010
  • 负责人:
    OHSHIMA Shigetoshi
  • 依托单位:
Study for therapeutic effect of hepatocyte specific Pten deficiency on severe obesity.
  • 批准号:
    20591041
  • 项目类别:
    Grant-in-Aid for Scientific Research (C)
  • 资助金额:
    $2.91万
  • 财政年份:
    2008
  • 负责人:
    OHSHIMA Shigetoshi
  • 依托单位:
The study of NASH mechanism-in terms of reactive oxygen species and mitochondrial function-
  • 批准号:
    18590714
  • 项目类别:
    Grant-in-Aid for Scientific Research (C)
  • 资助金额:
    $2.57万
  • 财政年份:
    2006
  • 负责人:
    OHSHIMA Shigetoshi
  • 依托单位:
Development of transmitting filters using sliced microstrip lines
  • 批准号:
    18560325
  • 项目类别:
    Grant-in-Aid for Scientific Research (C)
  • 资助金额:
    $2.49万
  • 财政年份:
    2005
  • 负责人:
    OHSHIMA Shigetoshi
  • 依托单位: