Development of InGaAs/GaAs strained single quantum well laser by phase looked epitaxy method.

相视外延法研制InGaAs/GaAs应变单量子阱激光器。

• 批准号: 03452258
• 负责人: YOSHII Kumayasu
• 金额: $ 4.22万
• 依托单位: Osaka University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for General Scientific Research (B)
• 财政年份: 1991
• 资助国家: 日本
• 起止时间: 1991 至 1992
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-03452258/
• 关键词: semiconductor laser; phase locked epitaxy; strained quantum well; photoluminescence; 半導体レ-ザ; 位相制御エピタキシ-

The crystallinity and optical property of InGaAs/GaAs strained single quantum well(SSQW) structure were studied by photoluminescence (PL) method in relation to the crystal growth conditions. A PL spectrum of InGaAs/GaAs SSQW structure made by MBE at 540ﾟC showed a peak shift of the QW luminescence line toward the lower wave length than the theoretically estimated position. This fact suggests that In atoms evaporate during MBE growth of InGaAs layer, resulting in the decrease of chi in In_<chi>Ga_<1-chi>As active layer. Because the In evaporation is thermally enhanced process, it is considered that lowering the deposition temperature is effective to suppress the In evaporation.In order to reduce the growth temperature of the InGaAs layer, we grow the InGaAs layer by applying MEE method, which.is known as a effective technique to reduce the growth temperature of AlGaAs/GaAs alloy semiconductor system. The PL spectra of the SSQW structure grown by MEE method showed that the In evaporation … More could be controlled by decreasing the growth temperature to 290ﾟC. However, FWHM of the PL line became broader than the one from the SSQW structure made by MBE at 540ﾟC. Also the RHEED pattern showed that the crystal quality of the film made at low temperature is inferior to the high temperature grown film.The excess As adhesion and the low mobility of the group III atoms were believed to be the key factors to determine the crystal quality of the SSQW structure grown at low temperatures. So we optimized the low temperature MEE growth condition by increasing the migration time of the group III atoms and by reducing the As partial pressure. The SSQW structure made by the optimized low temperature MEE process showed the comparable qualities in optical and crystallographic properties to the films made by the high temperature MBE process.It is demonstrated that the highly controlled InGaAs/GaAs SSQW structure in composition, crystallinity and optical quality were made by the optimized low temperature MEE process, which may be the promising process to obtain the SSQW laser devices. Less

采用光致发光（PL）方法研究了InGaAs/GaAs应变单量子阱（SSQW）结构的结晶性和光学性质与晶体生长条件的关系。用分子束外延技术制备的InGaAs/GaAs SSQW结构在540 ℃下的PL谱表明，QW发光线的峰位比理论估计的位置向较低的波长移动。这一事实表明，在MBE生长InGaAs层过程中，In原子蒸发，导致In_<chi>Ga_<1-chi>As有源层中chi的减少。由于In的蒸发是一个热增强过程，降低淀积温度可以有效抑制In的蒸发，为了降低InGaAs层的生长温度，我们采用了降低AlGaAs/GaAs合金半导体系统生长温度的有效技术--退火法来生长InGaAs层。which.is对SSQW结构的PL谱分析表明，In的蒸发 ...更多信息 可以通过将生长温度降低到290 ℃来控制。然而，PL线的半高宽变得比由MBE在540 ° C下制成的SSQW结构的PL线的半高宽。RHEED分析表明，低温下生长的SSQW结构的晶体质量不如高温下生长的SSQW结构，过量的As附着和III族原子的低迁移率被认为是决定低温下生长的SSQW结构的晶体质量的关键因素。因此，我们通过增加III族原子的迁移时间和降低As分压来优化低温外延生长条件。结果表明，采用优化的低温退火工艺制备的InGaAs/GaAs SSQW结构具有与高温MBE工艺相当的光学和晶体学性能，表明优化的低温退火工艺制备的InGaAs/GaAs SSQW结构在成分、结晶度和光学质量上都得到了高度控制，有望成为SSQW激光器件的制备工艺。少