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Low temperature growth of polycrystalline semiconductor and diamond films

多晶半导体和金刚石薄膜的低温生长

基本信息

批准号：
07455065
负责人：
YOSHII Kumayasu
金额：
$ 0.58万
依托单位：
Osaka University
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
1995
资助国家：
日本
起止时间：
1995 至 1996
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-07455065/
关键词：
low temperature growth polycrystalline silicon film RF sputtering method atomic hydrogen radicals 多結晶Si薄膜

项目摘要

In order to make polycrystalline silicon films at low temperature, hydrogen radicals have been utilized in the rf sputtering process. The films were prepared in gas mixtures containing argon and hydrogen. They were investigated by reflection electron diffraction and Raman spectroscopy. Furthermore, optical emission spectroscopy was employed to study the quantity of hydrogen radicals in the plasma, and the plasma potential was measured to decide the substrate bias voltage under realistic plasma condition for the deposition of silicon films.The results showed that polycrystalline silicon films were grown even at the substrate temperature of less than 200ﾟC.It was also found from the optical emission spectroscopy that there existed atomic hydrogen radicals with high energy of about 10eV.They are expected to be able to restructure the silicon atoms on the substrate. Thus the crystallization at such low temperature is considered to be mainly due to hydrogen radicals in the plasma.Structure … More of polycrystalline silicon films was investigated by X-ray diffraction, reflection electron diffraction and transmission electron microscopy. Furthermore, electrical and optical properties of the films were studied with the measurements of IR absorption, optical absorption, electron spin reesonance and electrical conductivity. The films were prepared by rf planar magnetron sputtering, in which process atomic hydrogen radicals were utilized in order to make the polycrystalline silicon films on the substarate at low temperature. Its was shown from X-ray diffraction, reflection electron diffraction and transmission electron microscopy that most of crystal silicon grains grew with a [100] texture, and that the grain sizes were 10--20'nm.The results obtained from IR absorption and optical absorption measurements were as follows ; hydrogen content decreased with the increase of hydrogen partial pressure (P_<H2>) in the range of 2<=P_<H2><=7mTorr, which was caused by the formation of Si--Si bonds, and in the range of 7<=P_<H2><=12mTorr, however, hydrogen content increased gradually with P_<H2>, which suggested that dangling bonds in the silicon films were more terminated in the higher hydrogen partial pressure. These facts were also explained by the electrical conductivity measurement, and it was found that the polycrystalline silicon film prepared under the highest hydrogen partial pressure had the lowest hopping site density in the films observed in this work. Less

为了在低温下制备多晶硅薄膜，在射频溅射过程中使用了氢自由基。薄膜是在含有Ar和H的混合气体中制备的。用反射电子衍射和拉曼光谱对其进行了表征。实验结果表明，即使在低于200ﾟC的衬底温度下，也可以生长出多晶硅薄膜。此外，光学发射光谱还发现，存在能量约为10 eV的高能氢自由基，它们有望对衬底上的硅原子进行重构。因此，在如此低的温度下结晶被认为主要是由于等离子体中的氢自由基。结构…用X射线衍射仪、反射电子衍射仪和透射电子显微镜对多晶硅薄膜进行了更多的研究。通过红外吸收、光吸收、电子自旋共振和电导等测试手段研究了薄膜的电学和光学性质。采用射频平面磁控溅射法制备多晶硅薄膜，利用原子氢自由基在衬底上低温生长多晶硅薄膜。X-射线衍射仪、反射电子衍射仪和透射电子显微镜分析表明，大部分晶体硅以[100]织构生长，晶粒尺寸为10-20‘nm。红外吸收和光吸收测量结果表明，在2&lt；=P<H2>&lt；=7mTorr范围内，氢含量随氢分压(P<H2>)的增加而降低，这是由于硅-硅键的形成所致，在7&lt；=P<H2>&lt；=12mTorr，但随着P_<H_2>的增加，氢含量逐渐增加，这表明在较高的氢分压下，硅膜中的悬挂键更易终止。电导率测量也解释了这些事实，发现在本工作观察到的薄膜中，在最高氢分压下制备的多晶硅薄膜具有最低的跳跃位密度。较少