Study on the ultra low resistivity phenomenon of hetero structure organic thin films

异质结构有机薄膜超低电阻率现象的研究

• 批准号: 05452182
• 负责人: YAMASHITA Tsutomu
• 金额: $ 4.48万
• 依托单位: Tohoku University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for General Scientific Research (B)
• 财政年份: 1993
• 资助国家: 日本
• 起止时间: 1993 至 1994
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-05452182/
• 关键词: LB films; Ultra low resistivity; Organic superconductor; Conductive organic thin films; 有機単分子膜; ヘテロ構造; TCNQ; アラキジン酸カドミウム; ステアリル・アミン

Preparation and the electric properties of hetero structure LB films has been investigated with a view to inspect the ultra low resistivity phenomenon in the films. The ultra low resistivity has never seen in the hetero LB films of arachidic Cd (AA)/C_<15> TCNQ (TCNQ) for which Hino reported the ultra low resistivity. It has been said that the spontaneous electric field of a Z type TCNQ LB films and an electron cloud produced at the AA/TCNQ hetero interface play a important role to occur this phenomenon. Additionally, in this study, we have found that a part of TCNQ formed Cd-TCNQ complex with Cd^<2+> in a sub-phase solution and the complex could be changed to a conductive charge transfer (CT) complex. It was postulated that a two dimensional conducting layr had been formed at the interface of the non-polar AA and the polar TCNQ LB films by the Cd-TCNQ CT complex. The postulation implied us that the ultra low resistivity was probably resulted from the hetero structure of dielectric/2 d … More imensional conductor/dielectric on which the Ginzburg's theory of high temperature superconductivity based. In this study, we prepared conductive, polar and non-polar thin films by the LB method to realize the hetero structure and estimated film qualities and properties. Among these films, Y type arachidic Cd LB films has a sufficient films quality as the non-polar film. For conductive films, the LB films with a sufficiently high conductivity (1- S/cm) were successfully formed by use of a CT complex of BEDT-TTF (BO) and C_<15> TCNQ.For polar films, alternately deposited Y type films were fabricated instead of a labile Z type TCNQ LB films. It was found that the alternately deposited films have a sufficient quality and spontaneous electric potential of about 1.8 V for a 7 layrs film. The electric properties of the LB films with non-polar/conductive/polar hetero structure consisting of above LB films attract our attention from the application view point of new molecular devices as well as the ultra low resistivity phenomenon. Less

本文研究了异质结构LB膜的制备和电学性质，以考察LB膜中的超低电阻现象。花生Cd（AA）/C_ TCNQ（TCNQ）异质LB膜的超低电阻率<15>是Hino报道过的。有人说，Z型TCNQ LB膜的自发电场和在AA/TCNQ异质界面处产生的电子云起着重要的作用，发生这种现象。另外，在亚相溶液中，部分TCNQ与Cd^&lt;2+&gt;形成Cd-TCNQ络合物，并可转变为导电的电荷转移（CT）络合物。推测Cd-TCNQ-CT复合物在非极性AA和极性TCNQ-LB膜的界面上形成了二维导电层。这一假设暗示了超低电阻率可能是由于介质/2D异质结构所致 ...更多信息 高温超导理论是金兹伯格高温超导理论的基础。在本研究中，我们借由LB法制备导电、极性及非极性薄膜，以实现异质结构并评估薄膜品质及性质。其中，Y型花生酸镉LB膜具有足够的非极性膜的膜质量。对于导电薄膜，BEDT-TTF（BO）与C_TCNQ的CT复合物成功地制备了具有足够高电导率（1- S/cm）的LB膜<15>;对于极性薄膜，交替沉积Y型薄膜代替不稳定的Z型TCNQ LB膜。发现交替沉积的膜具有足够的质量，对于7层膜，自发电位约为1.8V。由上述LB膜组成的具有非极性/导电/极性异质结构的LB膜的电学性质从新型分子器件的应用角度以及超低电阻率现象引起了我们的关注。少

项目成果

西田直樹、他: "ヘテロLB膜の作製とその電気特性" 電気学会論文誌. 114-A. 40-46 (1994)

Naoki Nishida 等人：“异质 LB 薄膜的制备及其电性能”，日本电气工程师学会汇刊 114-A（1994 年）。

西田直樹: "ヘテロLB膜の作製とその電気特性" 電気学会論文誌. 114-A. 40-46 (1994)

Naoki Nishida：“异质 LB 薄膜的制备及其电性能”，日本电气工程师学会汇刊 114-A（1994 年）。

Naoki Nishida et al.: "Preparation and electric properties of hetero LB films" Trans. IEE of Jpn.114-A-1. 40-46 (1994)

Naoki Nishida 等：“异质 LB 薄膜的制备和电性能”Trans。

西田直樹: "ヘテロLB膜の作製とその電気特性" 電気学会論文誌A. 114-A. 40-46 (1994)

Naoki Nishida：“异质 LB 薄膜的制备及其电性能”，日本电气工程师协会会刊 A. 114-A（1994 年）。