Sputter Deposition Cluster Tool

溅射沉积簇工具

• 批准号: 431751377
• 金额: --
• 依托单位: Technische Universität Ilmenau
• 依托单位国家: 德国
• 项目类别: Major Research Instrumentation
• 财政年份: 2020
• 资助国家: 德国
• 起止时间: 2019-12-31 至 无数据
• 项目状态: 未结题
• 来源: https://gepris.dfg.de/gepris/projekt/431751377?language=en
• 关键词: Sputter; Deposition; Cluster; Tool

For the fabrication of memristive devices an efficient PVD system for research and pilot productions is requested. The system is intended to enable the sputter deposition of various magnetic and non-magnetic materials, as well as to be suitable for reactive sputtering processes of oxide and nitride layers. For this purpose, the system should be equally usable for conductive and non-conductive / insulating, magnetic and non-magnetic substrates and substrate materials. Specifically, a system is being requested with 5 independent vacuum chambers: one load look chamber, one vacuum robotic transfer chamber, 2 sputtering chambers with a total of 6 sputtering sources (one used for research projects and the second for pilot production), oxidation chamber for tunnel barriers with integrated RF bias for substrate cleaning. The process direction should be in the sputter-down configuration. A dedicated turbomolecular pumping system for each chamber is desired. The layer deposition should be possible by confocal magnetron sputtering sources with DC, pulsed DC and RF supply. A controllable process gas inlet and manipulatable 6-inch substrate stages (rotating, heating, cooling, RF bias, gradient aperture) are also requested to develop novel functional layers for memristive devices. Individually adjustable target / substrate spacing is desired to allow the deposition of thin layers with a good homogeneity over the wafer. Removable stainless steel fenders are designed to help reduce unwanted coating on the inner process chamber surfaces. In addition, the requested system should be controlled via an automatic, recipe-controlled coating process, which is programmable by the user. This should allow to have a reproducible fabrication of memristive devices.

为了制造忆阻器件，需要用于研究和中试生产的高效PVD系统。该系统旨在实现各种磁性和非磁性材料的溅射沉积，以及适用于氧化物和氮化物层的反应溅射工艺。为此目的，该系统应同样可用于导电和非导电/绝缘、磁性和非磁性基底和基底材料。具体而言，需要一个具有5个独立真空室的系统：一个负载观察室，一个真空机器人转移室，2个溅射室，总共6个溅射源（一个用于研究项目，第二个用于试生产），用于隧道屏障的氧化室，具有用于基板清洁的集成RF偏压。工艺方向应在减速器向下配置中。每个腔室都需要一个专用的分子泵系统。层沉积应该可以通过具有DC、脉冲DC和RF电源的共焦磁控溅射源进行。还需要可控的工艺气体入口和可操纵的6英寸衬底台（旋转、加热、冷却、RF偏压、梯度孔径）来开发用于忆阻器件的新型功能层。期望可单独调节的靶/衬底间距以允许在晶片上沉积具有良好均匀性的薄层。不锈钢护舷设计用于帮助减少工艺腔室内部表面上不必要的涂层。此外，所要求的系统应通过自动化、配方控制的涂覆工艺进行控制，该工艺可由用户编程。这应当允许具有忆阻器件的可再现制造。