Ion etching and deposition cluster tool

离子蚀刻和沉积簇工具

• 批准号: 447013670
• 金额: --
• 依托单位: Friedrich-Alexander-Universität Erlangen-Nürnberg
• 依托单位国家: 德国
• 项目类别: Major Research Instrumentation
• 财政年份: 2020
• 资助国家: 德国
• 起止时间: 2019-12-31 至 无数据
• 项目状态: 未结题
• 来源: https://gepris.dfg.de/gepris/projekt/447013670?language=en
• 关键词: Ion; etching; deposition; cluster; tool

We are applying for a reactive ion etcher (inductively coupled plasma) with plasma-enhanced chemical vapor deposition as a cluster tool. It will substantially expand the possibilities of customized sample preparation at the Chair of Applied Physics. In particular, we will focus on the three-dimensional structuring of silicon carbide chips in order to develop novel devices for the investigation of light-matter interaction and novel quantum technologies. The equipment will be used for isotropic and anisotropic etching with fluorine and chlorine gases. For the deposition of thin, tailor-made layers (etch masks and sacrificial layers) a plasma assisted deposition in a second chamber will be used. The novel technique of atomic layer etching will be investigated methodically.

我们正在申请一种反应性离子蚀刻器（电感耦合等离子体），等离子体增强化学气相沉积作为簇状工具。它将大大扩大应用物理主席定制样品制备的可能性。特别是，我们将专注于碳化硅芯片的三维结构，以开发用于研究光物质相互作用和新型量子技术的新型设备。该设备将用于氟和氯气的各向同性和各向异性蚀刻。对于薄的、定制的层（蚀刻掩膜和牺牲层）的沉积，将在第二个腔室中使用等离子体辅助沉积。本文将对原子层刻蚀新技术进行系统的研究。