Ion etching and deposition cluster tool

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We are applying for a reactive ion etcher (inductively coupled plasma) with plasma-enhanced chemical vapor deposition as a cluster tool. It will substantially expand the possibilities of customized sample preparation at the Chair of Applied Physics. In particular, we will focus on the three-dimensional structuring of silicon carbide chips in order to develop novel devices for the investigation of light-matter interaction and novel quantum technologies. The equipment will be used for isotropic and anisotropic etching with fluorine and chlorine gases. For the deposition of thin, tailor-made layers (etch masks and sacrificial layers) a plasma assisted deposition in a second chamber will be used. The novel technique of atomic layer etching will be investigated methodically.