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Formation of Superconducting Phase by Laser Quenching

Formation of Superconducting Phase by Laser Quenching
通过激光淬火形成超导相
批准号:
61550219
负责人:
OHSHIMA Shigetoshi
金额:
$1.09万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for General Scientific Research (C)
财政年份:
1986
资助国家:
日本
项目状态:
已结题
起止时间:
1986 至 1987

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中文摘要
翻译
亚稳超导相可能是高T_c相,许多研究者试图用多种方法来获得亚稳超导相。激光淬火冷却速度快,是获得亚稳定相的一种很好的方法。本文介绍了激光淬火的方法,用激光淬火的方法研究了薄膜的超导性质:(A)用激光淬火的方法从非晶态的V-Si薄膜中获得了V_3Si相。T_COSET约为14K。(B)用激光退火法获得了亚稳相V-Al薄膜。(C)激光淬火没有得到亚稳的A15Nb_3Al相。激光淬火后,观察到了体心立方结构的Nb-Al相。(D)激光淬火后,得到了面心立方结构的亚稳定相Nb_3Si,但没有得到亚稳相A15Nb_3Si。
英文摘要
It hase been suggested that metastable superconducting phase would be a high-Tc phase and many investigators have been attemped to get a metastable superconducting phase by several methods. Laser quenching is a good method to get a meta stble phase,because cooling rate is very fast. In this report,we show the laser quenching method,the superconducting properties of films with laser aneealed.(a) V-Si filmA15 V_3Si phase was obtained from amorphous V-Si film by laser quenching. T_conset was about 14 K.(b) V-A1 filmA15 V_3Al,which is metastable phase, was obtained by laser annealing. T_c onset was about 12 K,which is highet value for A15 V_3Al phase now.(c) Nb-Al filmMeta stable A15 Nb_3Al phase was not obtained by laser quenching.After laser annealing,bcc Nb-Al phase was observed.(d) Nb-Si filmAfter laser quenching, fcc Nb_3Si of meta stable phase was obtained,but A 15 Nb_3Si phase was not obtainedIt was found that laser quenching is a good method to get a metastable phase
期刊论文(2)
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会议论文
S.Ohshima,T.Shiba,T.Kawanobe and T.Wakiyama: "Superconducting Properties and Phase Analysis of Nb-Si Thin Films Produced by Sputtering" Jpn.J.Appl.Phys.25. 1336-1341 (1986)
S.Ohshima、T.Shiba、T.Kawanobe 和 T.Wakiyama:“溅射生产的 Nb-Si 薄膜的超导特性和相分析”Jpn.J.Appl.Phys.25。
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期刊:
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作者: []
通讯作者:
大嶋重利,最上徹,国井誠,脇山徳雄: 応用物理. 54. 252-259 (1985)
Shigetoshi Oshima、Toru Mogami、Makoto Kunii、Norio Wakiyama:应用物理学 54. 252-259 (1985)。
DOI: --
发表时间:
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作者: []
通讯作者:
Examination of 3D-matrix superconducting micro-strip lines and its application to filters
  • 批准号:
    22560317
  • 项目类别:
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  • 资助金额:
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  • 财政年份:
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  • 资助金额:
    $2.91万
  • 财政年份:
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  • 依托单位:
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  • 批准号:
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  • 项目类别:
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  • 资助金额:
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  • 财政年份:
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  • 负责人:
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  • 批准号:
    18560325
  • 项目类别:
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  • 资助金额:
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  • 财政年份:
    2005
  • 负责人:
    OHSHIMA Shigetoshi
  • 依托单位:
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