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Formation and properties of amorphous hydrogenated carbon films with low hydrogen concentration

低氢浓度非晶氢化碳薄膜的形成及性能

基本信息

批准号：
10650689
负责人：
MARUYAMA Kazunori
金额：
$ 2.3万
依托单位：
Nagaoka University of Technology
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (C)
财政年份：
1998
资助国家：
日本
起止时间：
1998 至 1999
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-10650689/
关键词：
ECR plasma CVD hard a-C:H films thermal erosion RF bias mass spectra 熱腐蝕ガス放出スペクトル

项目摘要

In order to determine the optimum properties of hard a-C:H films suitable for protective use in fusion wall, thermal erosion behavior of hard a-C:H films prepared by ECR plasma deposition from the mixture of CHィイD24ィエD2 and Ar were measured. When these films were heated with raising the substrate temperature under vacuum, they released Ar, large amount of HィイD22ィエD2 and slight amount of hydrocarbon but the thickness of the films did not decrease. After they were heated up to 800 ℃, almost all HィイD22ィエD2 was released and micro-Vickers-hardness of them decreased but they were still hard. Namely, heat-treatment of hard a-C:H films gives semi-hard a-C:H films with low hydrogen concentration. The addition of Ar to the source methane gas causes the films formed to have smooth surface. However, if the hardness of original hard a-C:H film is much higher than that of silicon substrate, there gives rise to many craters on the surface owing to the Ar gas effusion by heat-treatment under vacuum. The pore size of very hard a-C:H films is considered to be small enough to prevent the effusion of incorporated gasses but the effusion of gases destroy the film textures. The cleaning procedure of silicon substrate is effective to prevent the peering of films during heat-treatment. The proper hardness of a-C:H films for protective use in fusion wall is considered to be that of silicon substrate.

为了确定适合于聚变堆壁防护用的a-C：H硬质薄膜的最佳性能，采用ECR等离子体沉积方法，以CH_（24）CH_（24）CH_（24）D_2和Ar为原料，制备了a-C：H硬质薄膜，并对其热侵蚀行为进行了研究。当在真空下加热这些薄膜并升高衬底温度时，它们释放出Ar、大量的H_2 O_2 O_2 O_2 O_2和少量的碳氢化合物，但薄膜的厚度不减小。当加热到800 ℃时，H_2O_（22）H_2O_（22）D_2几乎全部析出，显微硬度降低，但硬度仍较低。也就是说，硬a-C：H膜的热处理得到具有低氢浓度的半硬a-C：H膜。向源甲烷气体中加入Ar使得所形成的膜具有光滑的表面。但是，如果原始硬质a-C：H膜的硬度远高于硅衬底的硬度，则真空热处理时，由于Ar气体的逸出，会在表面产生许多凹坑。非常硬的a-C：H膜的孔径被认为足够小以防止并入的气体的渗出，但是气体的渗出破坏膜纹理。硅基片的清洗过程是防止热处理过程中膜层相互粘连的有效方法。认为作为熔壁保护用的a-C：H膜的合适硬度是硅衬底的硬度。