Development of New Types of Linear Photo Detectors

新型线性光电探测器的开发

基本信息

批准号：
06452031
负责人：
YAMANAKA Taku
金额：
$ 4.8万
依托单位：
Osaka University
依托单位国家：
日本
项目类别：
Grant-in-Aid for General Scientific Research (B)
财政年份：
1994
资助国家：
日本
起止时间：
1994 至 1995
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-06452031/
关键词：
photo detector,linearity

项目摘要

We have built a test setup to measure the linearity with the precision of 0.1%. By using the system, we have evaluated the linearity of the following new types of photo detectors.*Avalanche type photo diodeA bias voltage of about 1500V-2400V is applied on an avalanche photo diode (APD). A photon entering the p-type silicon forms an electron-hole pair. The electron is accelerated by the voltage, and produce another pairs, thereby amplifies the signal. The nonlinearity at the gain of 200 was less than 0.1% up to 140 thousand incident photons.*Hybrid type photomultiplier with Si diodeThis detector consists of cathode and PIN diode, and a voltage of about 10kV is applied between them. Photoelectrons from the cathode is accelerated, and produce about 2500 electorons per photoelectron when they hit the diode. The signal is detected by the PIN diode. This detector has an excellent linearity because of simple electron trajectory, and the good linearity of the PIN diode. The measured non-linearity was less than 0.1% up to 140 thousand incident photons.*Hybrid type photomultiplier with avalanche type Si diodeThis detector is same as the above except that it uses APD instead of PIN diode, to obtain higher gain. The measured non-linearity was about 6% at the gain of 5000, for 14 thousand incident photons. This large non-linearity was due to the avalanche photo diode itself, and it should in principle be more linear with a better APD.

我们已经建立了一个测试设置，以0.1％的精度测量线性。通过使用该系统，我们已经评估了以下新型照片探测器的线性。进入P型硅的光子形成电子孔对。电子通过电压加速，并产生另一对，从而扩大信号。增益时的非线性少于0.1％，最高1.4亿个入射光子。*杂化型光电倍增体，带有Si二乙基检测器，由阴极和销钉二极管组成，它们之间施加了约10kV的电压。来自阴极的光电子被加速，当二极管击中二极管时，每个光电子都会产生约2500个选举。信号由销二极管检测到。由于简单的电子轨迹和销钉的良好线性，该检测器具有出色的线性性。测得的非线性性小于0.1％，高达1.40亿个入射光子。*与雪崩型Si Diodethis检测器相同的杂化型光电倍增剂，除了它使用APD而不是PIN二极管以获得更高的增益。 14,000个入射光子的增益为5000时，测得的非线性度约为6％。这种大型的非线性性是由于雪崩照片二极管本身所致，原则上应该使用更好的APD线性。