Study on the initial stage of thin film growth to control the structure of hetero-interface on the atomic level

它是由第一原则理论预测的，即Au/Co-Fe金属多层将显示出一个大的永久性磁性异源性。然后，该系统实际上是由分子光束外延方法准备的，并确认该系统的永久磁性各异源能量实际上比Au/Co multilayr大。金属多层是一种由几种不同金属的替代沉积物制造的人造材料。金属多线显示一些有趣的属性suoh作为永久磁性的异向和巨型磁性存在。它们是高密度磁光学记录媒体的好样本。异界面的存在，即不同金属之间的接口，对这些有趣的物理属性负有责任，我们计算了金属多线的永久性磁性异源能量。它已经被明确了，即两个界面的异向和直诱导的异向都是对永久性磁异向负责任的。它还发现了一个接口的异构体，即它可以被表达为系统中的信号电子数量的一个函数。在具体情况下，它被预测为一个Au/Co-Fe多层单元将显示出一个约2 MeV/单位单元的较大的永久磁性动态，该系统实际上是由分子光束外延方法准备的。它被确认为，该系统的永久性磁性动态比Au/Co.的更大。这一结果是通过改变Valence电子的数目来控制磁性动态的可能性。

It is predicted by first-principles theory that Au/Co-Fe metallic multilayr will・show a large perpendicular magnetic anisotropy. Then this system was actually prepared by molecular beam epitaxy method and it is confirmed that the perpendicular magnetic anisotropy energy of this system is actually larger than Au/Co multilayr.Metallic multilayr is an artificial material which is fabricated by alternate deposition of a few kinds of different metals. Metallic multilayrs show some interesting properties suoh as perpendicular magnetic anisotropy and giant magnetoresisitance. They are good candidates for high-density magneto-optical recording media. The existence of hetero-interface, i.e.interface between different metals, is responsible for these interesting physical properties.We have calculated the perpendicular magnetic anisotropy energies of metallic multilayrs. It has been clarifed that both interface anisotropy and strain-induced anisotropy are responsible for perpendicular magnetic anisotropy. It is also found that the interface anisotropy can be expressed as a function of the number of valence electrons in the system. In particular, it is predicted that a Au/Co-Fe multilayr will exhibit a large perpendicular magnetic anisotropy of about 2 meV/unit cell This system was actually prepared by molecular beam epitaxy method. It was confirmed that the perpendicular magnetic anisotropy of this system is larger than that of Au/Co. This result suggests the possibility of controlling the magnetic anisotropy by changing the number of valence electrons.