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Development of combined FIM/STM system and investigation of the mechanism of thin-film growth on the atomic level

FIM/STM组合系统开发及原子水平薄膜生长机理研究

基本信息

批准号：
11305044
负责人：
YAMAMOTO Ryoichi
金额：
$ 28.54万
依托单位：
University of Tokyo
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (A).
财政年份：
1999
资助国家：
日本
起止时间：
1999 至 2000
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-11305044/
关键词：
Field ion microscope Scanning tunneling-microscope Crystal growth Surface diffusion Dissociation Nucleation Cluster Diffusivity

项目摘要

Although surface diffusion is an important process in thin film growth, because of the difficulty in observing the diffusion process of an atom directly without disturbing its motion, only a limited amount of work using field ion microscope (FIM) have been reported. This is because the application of FIM is restricted to a few metals like tungsten, platinum and so on. We have tried to develop a method to observe surface diffusion by a scanning tunneling microscope (STM) which is useful for observing the surface of a wide range of materials. We succeeded to control the sample temperature and got a nice of image of Si (111) and Si (100) between 30K and 320K.We also fabricated an evaporator for the deposition of silicon in ultra-high vacuum. We tried to observe the motion of an atom without affecting its motion by scanning only at the sample temperature of 30K where the position of the atom is frozen and letting the atom diffuse freely at a higher temperature without scanning. But it is found that because of thermal drift, it is very difficult to look at the same position constantly. This suggests some sort of a marker should be necessary to always find the same position. The sharp top of a tip created by FIM might be a possibility.We also investigated the effect of surface diffusion and cluster stability on thin-film growth by rate equation and kinetic Monte Carlo simulation using the directly measured data for Pt and Ir for the first time. Although the importance of cluster diffusion has been claimed by some groups based on a qualitative argument, it is found for the first time using experimental diffusion data that the cluster stability is much more important for growth compared to cluster diffusion.

虽然表面扩散是薄膜生长的一个重要过程，但由于很难在不干扰原子运动的情况下直接观察原子的扩散过程，因此使用场离子显微镜（FIM）进行的工作有限。这是因为FIM的应用仅限于钨、铂等少数金属。我们试图发展一种用扫描隧道显微镜（STM）观察表面扩散的方法，这种方法可用于观察各种材料的表面。我们成功地控制了样品温度，并在30K和320K之间获得了Si（111）和Si（100）的良好图像。我们还制作了一种在超高真空条件下沉积硅的蒸发器。我们试图在不影响原子运动的情况下观察原子的运动，只在样品温度为30K时扫描，原子的位置被冻结，让原子在更高的温度下自由扩散而不扫描。但由于热漂移的存在，很难持续观察同一位置。这表明某种类型的标记应该是必要的，总是找到相同的位置。由FIM制造的尖端尖顶可能是一种可能性。我们还首次利用Pt和Ir的直接测量数据，通过速率方程和动力学蒙特卡罗模拟研究了表面扩散和簇稳定性对薄膜生长的影响。尽管一些研究小组基于定性论证提出了簇扩散的重要性，但首次使用实验扩散数据发现，与簇扩散相比，簇稳定性对生长更为重要。