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The initial formation of the interface in the metal/compound-semiconductor system

金属/化合物-半导体体系中界面的初始形成

基本信息

批准号：
06452335
负责人：
OSAKA Toshiaki
金额：
$ 4.74万
依托单位：
Waseda University
依托单位国家：
日本
项目类别：
Grant-in-Aid for General Scientific Research (B)
财政年份：
1994
资助国家：
日本
起止时间：
1994 至 1995
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-06452335/
关键词：
Scanning tunneling microscope InSb (111) A- (2x2) surface Surface fine structure Initial adsorption InSb(111)A-(2×2)表面 STM In-vacancy buckling model

项目摘要

Understanding of the formation process and atomic structure of interfaces in the metal/semiconductor system is very important for improvements in its technology. Therefore, although such interfaces have been studied extensively for decades, little work associated with the metal/compound-semiconductor system has been carried out.In this work we report on the scanning tunneling microscopy (STM) study of the very initial stage of the interface formation in the Sn/InSb (111) A-2x2 system. So far this system has been the subject of RHEED investigation and DV-X alpha calculation. However, the question on "where is the Sn adsorbed on the InSb (111) A-2x2 surface? " has not been answered by direct methods such as STM.The clean and well-defined substrate surface of InSb (111) A-2x2 could be reproducibly prepared in UHV by annealing a sample in the narrow range near 460ﾟC.STM observations of the InSb (111) A-2x2 surface reveal the In-vacancy buckling structure which has been already reported by Bohr et al. For example, the STM for the occupied states manifests itself in the images corresponding to the lone-pair of Sb in the second layr near the In-vacancy at a high bias and to the bonding orbitals between the outermost layr of In and the second layr of Sb at a low bias. Occasionally, bilayr steps, the edges of which are perpendicular to eht [112] or [112] direction were observed. A novel model of these step structures is proposed on the basis of the electron counting model. The Sn is non-periodically adsorbed on the following three sites of the InSb (111) A-2x2 surface ; on-top sites of the In-vacancy, of the Sb in the second layr, and of the In in the outermost layr. Of these adsorption sites, the on-top of In-vacancy is most favorably occupied by Sn.

了解金属/半导体系统中界面的形成过程和原子结构对于改进其工艺是非常重要的。因此，虽然这样的界面已经被广泛研究了几十年，很少的工作与金属/化合物-半导体system.In这项工作中，我们报告的扫描隧道显微镜（STM）研究的非常初始阶段的界面形成的Sn/InSb（111）A-2x2系统。到目前为止，该系统一直是RHEED研究和DV-X α计算的主题。然而，关于“锡吸附在InSb（111）A-2x2表面的哪里？”InSb（111）A-2x2表面的STM观察揭示了Bohr等人已经报道的In空位屈曲结构。例如，占据态的STM在高偏压下对应于In空位附近第二层Sb的孤对像，在低偏压下对应于In最外层与Sb第二层之间的成键轨道像。偶见双层台阶，台阶边缘垂直于[112]或[112]方向。在电子计数模型的基础上，提出了一种新的台阶结构模型。Sn非周期性地吸附在InSb（111）A-2x2表面的三个位置上：In空位的顶部位置、第二层中的Sb的顶部位置和最外层中的In的顶部位置。在这些吸附位点中，In空位的顶部最有利地被Sn占据。