权益分类	功能权益	普通用户	{{item.name}}会员
{{category.name}}	{{benefitItem.name}}

Dynamical growth processes of group IV semiconducting films on the polar surfaces of compound semiconductors as assessed by RHEED rocking curve

RHEED 摇摆曲线评估化合物半导体极性表面 IV 族半导体薄膜的动态生长过程

基本信息

批准号：
08455341
负责人：
OSAKA Toshiaki
金额：
$ 4.99万
依托单位：
Waseda University
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
1996
资助国家：
日本
起止时间：
1996 至 1997
项目状态：
已结题

项目摘要

Recently, growth mode of the (111) surface of group-IV semiconductors has generated great interest. However, little work has been reported on the growth fashion on the {111} polar surfaces of III-V compound semiconductors. The purpose of this work is (i) to determine the surface normal components of atomic coordinated of InSb {111} A,B- (2*2) and (ii) to study dynamical growth processes of alpha-Sn films on these surfaces by using reflection high-energy electron diffraction (RHEED). Main results are given as follows :(i) By the quantitative analysis of RHEED rocking curves based on the dynamical diffraction theory, we have determined the surface normal atomic coordinates of the InSb {111} A,B- (2*2) surfaces which have the In-vacancy bucking structure and the Sb-trimer structure, respectively. The surface In atoms of InSb (111) A- (2*2) exhibit a large inward relaxation (-0.8). The analysis of InSb (111) B- (2*2), on the other hand, has revealed that the Sb-trimer is located at a height of -2.8 above the substrate Sb atoms, and that the prominent relaxation occurs in the subsurface region beneath the Sb-trimer.(ii) Surfaces of Sn growing on InSb {111} A,B has been studied with use of the RHEED intensity oscillation technique. The surfaces proceed in the formation of a bilayred lattice in the whole range of film thickness. However, the geometry of the outermost surface layr is quite different in both systems : The growing surface on the InSb (111) A smoothens with the same period as the lattice formation, whereas on InSb (111) B,below and above 6 ML of Sn, smooth surfaces emerge every period of monolayr and bilayr, respectively. The monolayr-period change in surface geometry is attributed to Sb segregation on the growing surface.

近年来，iv族半导体（111）表面的生长方式引起了人们极大的兴趣。然而，关于III-V型化合物半导体{111}极性表面生长方式的研究却很少。本工作的目的是：(1)测定InSb {111} A，B-(2*2)原子配位的表面法向组分；(2)利用反射高能电子衍射（RHEED）研究这些表面上α - sn薄膜的动态生长过程。主要结果如下：(1)基于动力学衍射理论，通过对RHEED摇摆曲线的定量分析，分别确定了具有空位屈曲结构的InSb {111} A、B-(2*2)表面和具有sb -三聚体结构的InSb {111} A、B-(2*2)表面的法向原子坐标。InSb (111) A-(2*2)的表面In原子表现出较大的向内弛豫（-0.8）。另一方面，对InSb (111) B-(2*2)的分析表明，Sb-三聚体位于基底Sb原子上方-2.8的高度，并且在Sb-三聚体下方的亚表面区域发生了明显的弛豫。（ii）利用RHEED强度振荡技术研究了在InSb {111} A，B上生长的Sn表面。在整个薄膜厚度范围内，表面继续形成双层红晶格。然而，在两种体系中，最外层的几何结构是完全不同的：InSb (111) A的生长表面在晶格形成的同一时期变得光滑，而在InSb (111) B上，在6 ML Sn以下和6 ML以上，单层和双层的每个时期都出现光滑的表面。表面几何结构的单层周期变化归因于生长表面的Sb偏析。