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Dynamical growth processes of group IV semiconducting films on the polar surfaces of compound semiconductors as assessed by RHEED rocking curve

RHEED 摇摆曲线评估化合物半导体极性表面 IV 族半导体薄膜的动态生长过程

基本信息

批准号：
08455341
负责人：
OSAKA Toshiaki
金额：
$ 4.99万
依托单位：
Waseda University
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
1996
资助国家：
日本
起止时间：
1996 至 1997
项目状态：
已结题

项目摘要

Recently, growth mode of the (111) surface of group-IV semiconductors has generated great interest. However, little work has been reported on the growth fashion on the {111} polar surfaces of III-V compound semiconductors. The purpose of this work is (i) to determine the surface normal components of atomic coordinated of InSb {111} A,B- (2*2) and (ii) to study dynamical growth processes of alpha-Sn films on these surfaces by using reflection high-energy electron diffraction (RHEED). Main results are given as follows :(i) By the quantitative analysis of RHEED rocking curves based on the dynamical diffraction theory, we have determined the surface normal atomic coordinates of the InSb {111} A,B- (2*2) surfaces which have the In-vacancy bucking structure and the Sb-trimer structure, respectively. The surface In atoms of InSb (111) A- (2*2) exhibit a large inward relaxation (-0.8). The analysis of InSb (111) B- (2*2), on the other hand, has revealed that the Sb-trimer is located at a height of -2.8 above the substrate Sb atoms, and that the prominent relaxation occurs in the subsurface region beneath the Sb-trimer.(ii) Surfaces of Sn growing on InSb {111} A,B has been studied with use of the RHEED intensity oscillation technique. The surfaces proceed in the formation of a bilayred lattice in the whole range of film thickness. However, the geometry of the outermost surface layr is quite different in both systems : The growing surface on the InSb (111) A smoothens with the same period as the lattice formation, whereas on InSb (111) B,below and above 6 ML of Sn, smooth surfaces emerge every period of monolayr and bilayr, respectively. The monolayr-period change in surface geometry is attributed to Sb segregation on the growing surface.

近年来，IV族半导体（111）表面的生长模式引起了人们的极大兴趣。然而，关于III-V族化合物半导体{111}极性表面的生长方式的报道很少。这项工作的目的是 (i) 确定 InSb {111} A,B- (2*2) 原子配位的表面法向分量，以及 (ii) 利用反射高能电子衍射 (RHEED) 研究这些表面上 α-Sn 薄膜的动态生长过程。主要结果如下：(i)通过基于动态衍射理论的RHEED摇摆曲线定量分析，分别确定了具有空位补偿结构和Sb三聚体结构的InSb{111}A,B-(2*2)表面的表面法向原子坐标。 InSb(111)A-(2*2)的表面In原子表现出较大的向内弛豫(-0.8)。另一方面，对InSb(111)B-(2*2)的分析表明，Sb三聚体位于基底Sb原子上方-2.8的高度处，并且显着的弛豫发生在Sb三聚体下方的次表面区域。(ii)利用RHEED强度振荡技术研究了在InSb{111}A、B上生长的Sn表面。表面在整个膜厚度范围内继续形成双层晶格。然而，两个系统中最外表面层的几何形状有很大不同：InSb（111）A上的生长表面以与晶格形成相同的周期平滑，而在InSb（111）B上，低于和高于6 ML的Sn，光滑表面分别在单层和双层的每个周期出现。表面几何形状的单层周期变化归因于生长表面上的锑偏析。