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Materials Design of Electronic Devices Using Heat-Stable Metal-Oxide Semiconductor junction

使用热稳定金属氧化物半导体结的电子器件材料设计

基本信息

批准号：
06453076
负责人：
YANAGIDA Hiroaki
金额：
$ 3.39万
依托单位：
University of Tokyo
依托单位国家：
日本
项目类别：
Grant-in-Aid for General Scientific Research (B)
财政年份：
1994
资助国家：
日本
起止时间：
1994 至 1995
项目状态：
已结题

项目摘要

The CuO/ZnO heterojunctions are fabricated by (1) stacking of CuO and ZnO sputtered thin-film or (2) sintering stacked CuO and ZnO powder compacts. Highly rectifying V-I characteristics is observed at thin-film CuO/ZnO heterojunction. Rectifying character kept at higher temperature even at 480K.Capacitance of the junction is independent of applied reverse voltage and it would indicate that a p-i-n structure is produced at CuO-ZnO interface due to the inter diffusion of the cations. The rectifying character is broken by the thermal treated at higher than 673K.Isothermal capacitance transient spectroscopy (ICTS) is applied for the characterization of the junctions and the ICTS signals whose activation energy of 0.22eV is observed at the thermal treated thin film CuO/ZnO heterojunction.Except for the application to the electronic devices, the CuO/ZnO heterojunction can also be applied to the CO gas sensor and catalysts for CO oxidation. Applied voltage dependent CO oxidation reaction is observed at the CuO-ZnO contact interface. When revese bias (CuO+, ZnO-) is applied, the amount of produced CO_2 from the catalytic surface of interface rapidly enhanced, where it suppressed by applying forward bias. The phenomenon would be due to the variation in Fermi level position of CuO surface. For the addition of such a function to the CuO/ZnO heterocontact device, P-i-n structure is indispensable and it is produced by the inter diffusion of Cu^<2+> or Zn^<2+> at the contact interface. For the precise understanding of the electric structure of the CuO/ZnO heterojunction, solubility of Cu^<2+> to ZnO matrix is investigated by evaluating the lattice parameters and non-stoichiometry of the Cu_xZn_<1-x>O_<1-delta> systems. By the relation of the value of delta and x, the solubility limit of substitutionally solved Cu into ZnO matrix is able to be evaluated and it was about 4.3mol% at 1000ﾟC.

CuO/ZnO异质结的制备方法是：(1)CuO和ZnO溅射薄膜的堆积或(2)CuO和ZnO粉末压坯的堆积。在薄膜CuO/ZnO异质结上观察到了高度整流的伏安特性。在480K温度下仍保持较高的整流特性。结的电容与外加的反向电压无关，说明CuO-ZnO界面由于阳离子的互扩散而形成p-i-n结构。在673K以上的热处理破坏了CuO/ZnO异质结的整流特性。用等温电容瞬变谱(ICTS)对结进行了表征，观察到了激活能为0.22 eV的ICTS信号。CuO/ZnO异质结除了应用于电子器件外，还可用于CO气体传感器和CO氧化催化剂。在CuO-ZnO接触界面观察到外加电压相关的CO氧化反应。当施加反偏压(CuO+，ZnO-)时，界面催化表面产生的CO_2量迅速增加，而正向偏压则抑制了生成CO_2的量。这可能是由于CuO表面费米能级位置的变化所致。为了在CuO/ZnO异质接触器件中增加这样的功能，P-i-n结构是必不可少的，它是由Cu^&lt；2+&gt；或Zn^&lt；2+&gt；在接触界面上的互扩散而产生的。为了准确地理解CuO/ZnO异质结的电子结构，通过计算CuxZn&lt；1-x&gt；O&lt；1-Delta&gt；体系的晶格参数和非化学计量比，研究了Cu2+&gt；根据差值与x的关系，可以估算出取代态铜在氧化锌基质中的溶解极限，在1000ﾟC时，其溶解度约为4.3mol%。