CONTROL OF CONDUCTION BEHAVIOR OF INORGANIC CRYSTALS WITH WIDE BAND GAP

宽带隙无机晶体导电行为的控制

• 批准号: 06453080
• 负责人: KAWAZOE Hiroshi
• 金额: $ 4.54万
• 依托单位: TOKYO INSTITUTE OF TECHNOLOGY (1995)Okazaki National Research Institutes (1994)
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for General Scientific Research (B)
• 财政年份: 1994
• 资助国家: 日本
• 起止时间: 1994 至 1995
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-06453080/
• 关键词: n-type conducting oxide; transparent electrods; ultra-violet transparent conductor; mixed valence oxide; 透明伝導体; イオン注入; キャリア生成; アモルファス伝導体

Results obatined in the present study are summarized in the following.1)Chemical design of n-type conductive and wide gap oxides. Necessary conditions for realizing high mobility of an electron in a conduction band are : A.Complex oxides of p-block cations which have an electronic configuration of (n-1)d^<10>S^0 ; B.Oxygen polyhedra of the cations constitute an edge sharing linear chain which is a highway of an electron ; C.The phase has hopefully a vacant cation site. This is expected to act as a doping site of excess cations.2)On the basis of the hypothesis MgIn_2O_4, CdGa_2O_4 and ZnGa_2O_4 with spinel structure were selected. These materials were found to be an n-type conductor and transparent for visible light because of wide band gap larger than 3.5eV.3)Finding of electron-carrier-generation by cation-implantation. Generation of electron carriers in insulating thin film of MgIn_2O_4 by Li^+-or H^+-implantation was observed. An yield of carrier electron was found to be -100%, when the flux of implanted ions was less than 10^<16>cm^<-2>.4)Some new transparent and conductive oxides with pyrochlore structure were newly found.5)In a course of study on wide gap p-type conducting oxides some S^0-S^2 mixed valence phases were found. These include Pb^<2+>-Pb^<4+>, Bi^<3+>-Bi^<5+> and Tl^+-Tl^<3+> mixed valence states.

本文的主要研究结果如下：1）n型导电宽禁带氧化物的化学设计。在导带中实现电子的高迁移率的必要条件是：A.具有（n-1）d^S ^0电子构型的p-区阳离子的复合氧化物<10>; B.阳离子的氧多面体构成共享边缘的线性链，其是电子的高速公路; C.相希望具有空的阳离子位点。2）在此基础上，选择了具有尖晶石结构的MgIn_2O_4、CdGa_2O_4和ZnGa_2O_4。发现这些材料是n型导体，并且由于大于3.5eV的宽带隙而对可见光透明。3）发现通过阳离子注入产生电子载流子。观察到Li^+或H^+离子注入MgIn_2O_4绝缘薄膜中产生电子载流子。在<16><-2>宽禁带p型导电氧化物的研究过程中，发现了一些S^0-S^2混合价态，包括Pb^&lt;2+&gt;-Pb^&lt;4+&gt;，Bi^&lt;3+&gt;-Bi^&lt;5+&gt;和Tl^+-Tl^&lt;3+&gt;混合价态。

项目成果

Kazuhiko Yanagawa, H.Yoshimichi Ohki, Takahisa Omata, Hideo Hosono, Naoyuki Ueda, and Hiroshi Kawazoe: "Preparation of Cd_<1-x>Y_xSb_2O_6 Thin Film on Glass Substrate by Radio Frequency Sputtering" Applied Physics Letters. Vol.65 No.4. 406-408 (1994)

Kazuhiko Yanakawa、H.Yoshimichi Ohki、Takahisa Omata、Hideo Hosono、Naoyuki Ueda 和 Hiroshi Kawazoe：“通过射频溅射在玻璃基板上制备 Cd_<1-x>Y_xSb_2O_6 薄膜”应用物理快报。

Masahiro Yasukawa: "Novel Transparent and Electroconductive Amorphous Semiconductor: Amorphous AgSb03 Film" Japanese Journal of Applied Physics. 34[3A]. L281-L284 (1995)

Masahiro Yasukawa：“新型透明导电非晶半导体：非晶AgSb03薄膜”日本应用物理学杂志。

Masahiro Yasukawa: "Preparation of Electroconductive and Transparent Thin Films of AgSb03" Journal of Ceramic Society of Japan. 103[5]. 455-459 (1995)

Masahiro Yasukawa：“AgSb03 的导电和透明薄膜的制备”日本陶瓷学会杂志。

M.Yasukawa: "Preparation of electroconductive and transparent thin films of AgSbO_3" Journal of Ceramic Society of Japan. 103(in press). (1995)

M.Yasukawa：“AgSbO_3导电透明薄膜的制备”日本陶瓷学会杂志。

Kasahiro Yasukawa: "Novel Transparent and Electroconductive Amorphous Semiconductor : Amorphous AgSb03 Film" Japanese Journal of Applied Physics. 34[3A]. L281-L284 (1995)

Kasahiro Yasukawa：“新型透明导电非晶半导体：非晶 AgSb03 薄膜”日本应用物理学杂志。