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Alternative Methods for Doping and Interface-Defect Engineering of Silicon and Silicon-Nanostructures for Photovoltaic and Nanoelectronic Applications

Alternative Methods for Doping and Interface-Defect Engineering of Silicon and Silicon-Nanostructures for Photovoltaic and Nanoelectronic Applications
用于光伏和纳米电子应用的硅和硅纳米结构的掺杂和界面缺陷工程的替代方法
批准号:
434030435
负责人:
Professor Dr. Daniel Hiller
金额:
$0.0万
依托单位国家:
德国
项目类别:
Heisenberg Grants
财政年份:
--
资助国家:
德国
项目状态:
未结题
起止时间:

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中文摘要
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英文摘要
The precondition for a Heisenberg Programme funding is high scientific quality and originality of the research project at international level and suitability for further qualification as a university teacher. Applicants need to meet all the requirements for appointment to a permanent professorship.The aim of this programme is to enable outstanding scientists to prepare for a scientific leadership function, and simultaneously work on further research topics. This research does not necessarily need to be planned and carried out in the form of a project.For this reason, and unlike the procedure in other funding programmes, both the abstracts of applications and final reports are not required and will therefore not be published in GEPRIS.
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Phosphorous und Boron in nanoscale Silicon - Investigation of Doping and Defect Mechanisms
  • 批准号:
    267333971
  • 项目类别:
    Research Grants
  • 资助金额:
    $0.0万
  • 财政年份:
    2014
  • 负责人:
    Professor Dr. Daniel Hiller
  • 依托单位:
Modulation-Acceptor Doping of SiO2 as Novel Doping Method for Silicon Nanowires (MADSiNano)
国内基金
海外基金
Computational Methods for Analyzing Toponome Data