Alternative Methods for Doping and Interface-Defect Engineering of Silicon and Silicon-Nanostructures for Photovoltaic and Nanoelectronic Applications

用于光伏和纳米电子应用的硅和硅纳米结构的掺杂和界面缺陷工程的替代方法

• 批准号: 434030435
• 负责人: Professor Dr. Daniel Hiller
• 金额: --
• 依托单位: Institut für Angewandte Physik
• 依托单位国家: 德国
• 项目类别: Heisenberg Grants
• 资助国家: 德国
• 项目状态: 未结题
• 来源: https://gepris.dfg.de/gepris/projekt/434030435?language=en
• 关键词: Alternative; Methods; Doping; Interface; Defect

The precondition for a Heisenberg Programme funding is high scientific quality and originality of the research project at international level and suitability for further qualification as a university teacher. Applicants need to meet all the requirements for appointment to a permanent professorship.The aim of this programme is to enable outstanding scientists to prepare for a scientific leadership function, and simultaneously work on further research topics. This research does not necessarily need to be planned and carried out in the form of a project.For this reason, and unlike the procedure in other funding programmes, both the abstracts of applications and final reports are not required and will therefore not be published in GEPRIS.

海森堡计划资助的先决条件是高科学质量和国际水平的研究项目的原创性，并适合作为大学教师的进一步资格。申请人需要满足任命为永久教授的所有要求。该计划的目的是使杰出的科学家为科学领导职能做好准备，同时从事进一步的研究课题。这项研究并不一定需要以项目形式规划和进行，因此，与其他资助计划的程序不同，申请摘要和最后报告都不需要，因此不会在GEPRIS上发表。