Phosphorous und Boron in nanoscale Silicon - Investigation of Doping and Defect Mechanisms

纳米级硅中的磷和硼 - 掺杂和缺陷机制的研究

• 批准号: 267333971
• 负责人: Professor Dr. Daniel Hiller
• 金额: --
• 依托单位: Matematicko-fyzikální fakulta
• 依托单位国家: 德国
• 项目类别: Research Grants
• 财政年份: 2014
• 资助国家: 德国
• 起止时间: 2013-12-31 至 2017-12-31
• 项目状态: 已结题
• 来源: https://gepris.dfg.de/gepris/projekt/267333971?language=en
• 关键词: Phosphorous; und; Boron; nanoscale; Silicon

Silicon, whose electronic properties can be controlled via doping with phosphorous and boron, is the basis of manifold technological applications in electronics, optoelectronics, and photovoltaics. Especially the CMOS transistor technology approaches the threshold to dimensions where quantum confinement effects occur. On the nanoscale various problems of semiconductor-physical, thermodynamical, or statistical nature impede the successful and reliable doping of source/drain regions of field effect transistors which appear to prevent further miniaturization. On the other hand, various papers report on successful P- and B-doping of silicon quantum dots (Si QDs) of few nanometers in size. Our recent studies on P-doping of 5 nm Si QDs reproduce the literature reports. However, the combination with detailed structural measurements and statistical analysis (atom probe tomography, synchrotron-based x-way absorption spectroscopy) created doubt, whether the optically and electrically measured changes of the Si QD properties are indeed caused by real P-doping. Our data reveals a rather large number of P-atoms per QD, though only a percent fraction seems to be ionised with 2-3 times higher ionisation energies than for bulk-Si. Density functional simulations of P-doped Si approximants reveal no states providing majority carriers for none of the potential configurations. Various states in the vicinity of the band edges occur, however, which represent possible defect- and recombination centers. These states seem to be a feasible explanation for the attenuated photoluminescence and the improved conductance. Based on this preliminary work we want to investigate within this proposal the P- and B-doping of nanoscale silicon in detail. The major goal is the elucidation of the contradiction between the various literature reports as well as the creation of a comprehensive overview of defect- and doping mechanisms. For this endeavour we possess a sample system which was optimized for several years as well as an extensive tool box of approved structural, optical, and electrical measurement instruments.Considering the importance of future Si-based electronics, the investigation of doping of nanoscale silicon is of utmost priority. The experimental and personnel configuration of this project proposal offers the ideal chance to achieve crucial research results that reveal to which extent classical doping can be employed in future field effect transistor generations and what kind of defect mechanisms have to be expected.

硅的电子性能可以通过掺杂磷和硼来控制，是电子、光电子和光伏等多种技术应用的基础。特别是CMOS晶体管技术已经接近量子限制效应发生的阈值。在纳米尺度上，半导体物理、热力学或统计性质的各种问题阻碍了场效应晶体管源极/漏极区掺杂的成功和可靠，这似乎阻碍了进一步的小型化。另一方面，许多论文报道了几纳米尺寸的硅量子点（Si QDs）成功掺杂P和b。我们最近对5nm Si量子点p掺杂的研究再现了文献报道。然而，结合详细的结构测量和统计分析（原子探针断层扫描，基于同步加速器的x路吸收光谱），人们对Si QD性质的光学和电测量变化是否确实是由真正的p掺杂引起的产生了怀疑。我们的数据显示，每个量子点有相当多的p原子，尽管只有百分之一的部分被电离，电离能比体硅高2-3倍。p掺杂Si近似物的密度泛函模拟显示，没有任何一种状态为任何一种潜在构型提供多数载流子。然而，在带边缘附近会出现不同的状态，这代表了可能的缺陷和重组中心。这些状态似乎是光致发光衰减和电导提高的可行解释。基于这一初步工作，我们希望在本提案中详细研究纳米级硅的P-和b掺杂。主要目标是阐明各种文献报告之间的矛盾，以及对缺陷和兴奋剂机制的全面概述。为此，我们拥有一个经过多年优化的样品系统，以及广泛的经批准的结构，光学和电气测量仪器工具箱。考虑到未来硅基电子学的重要性，纳米级硅掺杂的研究是重中之重。本项目提案的实验和人员配置为实现关键的研究结果提供了理想的机会，这些研究结果揭示了经典掺杂在未来场效应晶体管一代中的应用程度，以及预期会出现什么样的缺陷机制。

项目成果

Atom probe tomography of size‐controlled phosphorus doped silicon nanocrystals

• DOI: 10.1002/pssr.201600376
• 发表时间: 2017-01
• 期刊: physica status solidi (RRL) – Rapid Research Letters
• 作者: K. Nomoto;D. Hiller;S. Gutsch;A. Ceguerra;A. Breen;M. Zacharias;G. Conibeer;I. Perez-Wurfl;S. Ringer

Electronic properties of phosphorus doped silicon nanocrystals embedded in SiO2

• DOI: 10.1063/1.4915307
• 发表时间: 2015-03-16
• 期刊: APPLIED PHYSICS LETTERS
• 影响因子: 4
• 作者: Gutsch, Sebastian;Laube, Jan;Zacharias, Margit
• 通讯作者: Zacharias, Margit