HAR/Nano-ICP Dry Etching Process Unit

ICP干刻蚀技术是硅微加工的一种基本方法。蚀刻过程是各向异性的，可以产生几乎任何形状的沟槽、孔和凹槽，并且大部分是垂直的侧面。与各向异性湿化学蚀刻技术一起，其中蚀刻速率面向晶体平面，ICP干蚀刻为硅制成的微机械结构提供了非常高的设计多样性。硅体微力学是IMT的中心课题，在几乎所有的研究项目中都扮演着重要的角色。但是，1995年购买的ICP干式蚀刻系统现在已遭到不可挽回的损坏，完全失效。此外，对最小结构宽度、纵横比、精确可调且均匀的刻蚀深度和侧面角的正交性的要求也显著增加。此外，现代RIE/DRIE蚀刻系统在使用抗蚀膜，强大的ICP源，集成的过程冷却和快速的样品进料和出料时提供高选择性。垂直结构翼面以及翼面与蚀刻地面之间尽可能垂直的过渡，除其他外，得益于非常快的气体变化。为了成功地开展当前和计划中的研究项目，并采用最先进的工业技术，因此，必须采购现代化的高性能HAR/纳米icp干式蚀刻系统，以满足日益增长的要求。

The ICP dry etching technique is a basic microfabrication method for silicon. The etching process is anisotropic and enables to create trenches, holes and recesses with almost any shape and largely vertical flanks. Together with the anisotropic wet chemical etching technique, where the etching rate is oriented to the crystal planes, ICP dry etching offers a very high design variety for micromechanical structures made of silicon.Silicon bulk micromechanics is a central topic at IMT, which plays a major role in almost all research projects. However, the ICP dry etching system purchased in 1995 has now been irreparably damaged and has failed completely. In addition, the requirements regarding the minimum structure width, the aspect ratio, an exactly adjustable and uniform etching depth and the orthogonality of the flank angle have increased significantly. Furthermore, modern RIE/DRIE etching systems offer high selectivity when using resist masks, powerful ICP sources, integrated process cooling and fast sample infeed and outfeed. Vertical structural flanks and a transition as perpendicular as possible between the flanks and the etching ground are favored, among other things, by a very fast gas change. In order to carry out current and planned research projects successfully and with state-of-the-art industrial technology, it is therefore essential to procure a modern, high-performance HAR/Nano-ICP dry etching system that meets the increased requirements.