SFB 787: Semiconductor Nanophotonics: Materials, Models, Devices

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The Collaborative Research Centre "Semiconductor Nanophotonics: Materials, Models, Devices" combines three complementary areas of research aiming towards the development of novel nanophotonic devices. The unique interplay between material growth, advanced characterization of semiconductor nanostructures, and modeling of electronic properties constitutes the core element of area A based on two most relevant families of semiconducting materials for optoelectronics (group III-arsenides and III-nitrides). The second area B focuses on theoretical and numerical modeling ranging from the description of fundamental optic, electronic, and vibronic properties of nanomaterials to the simulation of nanophotonic devices. Designing, processing and characterizing of novel light emitters and amplifiers is the center of interest for the third area C focusing on a multitude of real-world applications. These research activities are complemented by the Integrated Research Training Group "School of Nanophotonics" (project D), which brings together Ph.D. students with diverse scientific backgrounds. The RTG adds a broad educational component with a strong interdisciplinary character that supports the students' career development with a special focus on entrepreneurship. Overall, the research activities in the third phase of the CRC will yield fruition of many seeds planted throughout the first two CRC phases, accompanied by the realization of a number of new nanophotonic devices and their application in quantum communication systems, data transfer, and I/O engines, as well as a comprehensive understanding of the underlying physics. One central goal is to realize electrically driven quantum key systems that are based on q-bit and entangled photon emitters operating at high q-bit rates and their implementation in real information networks. This includes the realization of deterministic single quantum dot emitters for the generation of on-demand, frequency-locked, indistinguishable photons. We will realize room temperature operation of electrically pumped UV single photon emitters based on GaN QDs. Also the impact of cavity quantum electrodynamics effects on the performance of ultra-small vertical cavity surface emitting lasers (VCSELs) and metal-cavity nano-lasers for applications in multi-terabus systems will be explored. In addition, we are planning to develop a silicon photonic I/O engine based on hybrid integration of VCSELs with silicon photonics for highly efficient chip-to-chip communication. Finally, we will demonstrate AlGaN-based current-injection deep UV laser diodes for applications in diagnostics, sensing, and 3D-printing. The realization of these nanophotonic devices and applications poses a formidable challenge for the third funding period of the CRC 787 and will trigger follow-up research efforts well beyond 2019. We also expect that the output of the CRC research will fuel innovations at industry partners and generate spin-off companies.