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Studies on non-emissive fragments of radicals of <SiH_4> used for plasma processing

等离子体处理用<SiH_4>自由基非发射碎片的研究

基本信息

批准号：
60460120
负责人：
TOSHIO Goto
金额：
$ 4.74万
依托单位：
Nagoya University
依托单位国家：
日本
项目类别：
Grant-in-Aid for General Scientific Research (B)
财政年份：
1985
资助国家：
日本
起止时间：
1985 至 1986
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-60460120/
关键词：
Plasma Processing <SiH_4>Non-Emissive Radical Electron Collision Emission Cross Section Level Excitation Cross Section Lifetime LIF法

项目摘要

<SiH_4> is an important gas used in producing amorphous silicon film, but electron collision processes for <SiH_4> molecules have not been studied sufficiently. The purposes of this research have been to measure emission cross sections (ECS), cascade-corrected level excitation cross sections (LECS) and lifetimes of excited emissive fragments, and further LECS of non-emissive fragments of radicals produced by electron impact on <SiH_4> with using various spectroscopic measurement methods. This research has been made from 1985 to 1986, and the following results have been obtained.1. Combining a beam method with a photon counting method and using a He standard method, ECS of the excited fragments of radicals ( <SiH^*> , <Si^*> , <H^*> ) produced by electron impact on <SiH_4> molecules have been measured in the electron energy region of 0 to 100 eV.2. Using a delayed coincidence method, the decays of transitions from <Si^*> and <SiH^*> fragments have been observed,and the lifetimes of those fragments and the contributions of cascading transitions have been obtained. Combining this result with ECS in 1., LECS of the <Si^*> fragments (4s, 4p, 3d, 3 <p^3> ) and <SiH^*> (A <^2(DELTA)> ) have been determined first at our experiment. These LECS are useful data in clarifying the mechanisms in processing plasmas.3. Using a laser induced fluorescence method (LIF method), the lifetimes of the individual vibronic levels in the <SiH^*> (A <^2(DELTA)> ) electronic excited level have been measured.4. The method has been developed in which we can determine LECS of the non-emissive fragments X <^2(PI)> of SiH radicals using the LIF,a time resolved spectroscopic method and further the results of 1 to 3. The preliminary measurement has been made. This study is continued at present. It is expected that the final results can be obtained by improving the S/N ratio and increasing the laser power.

<SiH_4>是制备非晶硅薄膜的重要气体，但对分子间的电子碰撞过程<SiH_4>还没有充分的研究。本研究的目的是测量发射截面（ECS），级联校正的水平激发截面（LECS）和激发的发射碎片的寿命，并进一步LECS的自由基产生的电子碰撞与<SiH_4>使用各种光谱测量方法的非发射碎片。本研究于1985年至1986年进行，取得了以下成果.将束流法与光子计数法相结合，采用He标准法，在0 ~ 100 eV电子能量范围内，测量了电子碰撞分子产生的自由基（<SiH^*>，<Si^*>，<H^*>）激发碎片的ECS<SiH_4>.利用延迟符合方法，观测了<Si^*>和<SiH^*>碎片跃迁的衰变，得到了这些碎片的寿命和级联跃迁的贡献。将该结果与1.中的ECS结合，在我们的实验中首先测定了<Si^*>碎片（4s，4p，3d，3 <p^3>）和<SiH^*>（A <^2（DELTA）>）的LECS。这些LECS数据对阐明等离子体的加工机理是有用的.采用激光诱导荧光法（LIF法），测量了<SiH^*>（A <^2（DELTA）>）电子激发能级中各个振动能级的寿命。4.利用LIF时间分辨光谱法，在1 ~ 3的基础上，发展了一种测定SiH自由基非发射碎片X <^2（PI）> LECS的方法。已进行了初步测量。这项研究目前仍在继续。预计通过提高信噪比和增大激光功率可以得到最终的结果。