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Basic Researches on Active Optical Resonators of Multi-Quantum-Well Structure to be Used for Direct Microwave Modulation

用于直接微波调制的多量子阱结构有源光谐振器的基础研究

基本信息

批准号：
60460138
负责人：
HAMASAKI Joji
金额：
$ 4.8万
依托单位：
Institute of Industrial Science, University of Tokyo
依托单位国家：
日本
项目类别：
Grant-in-Aid for General Scientific Research (B)
财政年份：
1985
资助国家：
日本
起止时间：
1985 至 1986
项目状态：
已结题

项目摘要

[1] Rediative recombination coefficient of free carriers in multi-quantum-wells. The radiative recombination coefficient B of two-dimensional free carriers in a selectively doped GaAs/n-AlGaAs quantum well was determined by measuring the decay time of photoluminescence from the wells. The experimental findings are well explained by the theory of band-to-band recombination of two-dimensional carriers.[2] Absolute flatness of GaAs-AlGaAs quantum wells. It is found that the interfaces of AlGaAs-on-GaAs formed by continuous MBE have the roughness of an atomic layer height whose step interval is 200A, resulting in the photoluminescence(PL) broadening. It is also found that this roughness is smoothed by growth interruption for tens of seconds prior the formation of the interfaces, leading to a drastic sharpening of PL spectra.[3] Splitting of photoluminescence spectra and negative differential resistance caused by the electric field in multi-quantum-well structure. It is found that when the … More perpendicular electric field exceeds a critical value, the field induces a resonant coupling of the two lowest quantum levels in the adjacent wells, resulting in splitting of photoluminescence spectra and in negative differential resistance of the photocurrent.[4] Energy levels and electron wave functions in semiconductor quantumwells having superlattice-alloylike material as barrier layers. Energy levels and wave functions are studied in GaAs quantum wells for the case when barriers are formed with ultra-short-period superlattice. The modified Kronig-Penney analysis is found effective in predicting the observed energy and has clarified a feature of enhanced penetration of wave function into the barrier layers.[5] Active optical resonator with a very short cavity length. Active optical resonators, which have active layers of GaAs-AlGaAs superlattice and multi-layered optical reflectors having low refractive index material of GaAs-AlAs superlattice of a very short period, were experimentally studied. It was found that the mode-coupling and the mode-competition are the basic phenomena in understanding the behaviors of these resonators. Less

[1]多量子阱中自由载流子的辐射复合系数。通过测量选择性掺杂的GaAs/n-AlGaAs光致发光的衰减时间，确定了二维自由载流子的辐射复合系数B。用二维载流子带间复合理论很好地解释了实验结果。[2]GaAsAlGaAs型量子阱的绝对平坦性。研究发现，连续分子束外延形成的AlGaAs-on-GaAs界面具有原子层高度的粗糙度，其阶跃间隔为200A，导致光致发光展宽。我们还发现，在界面形成之前，由于生长中断了几十秒，这种粗糙度被平滑了，导致了发光光谱的急剧锐化。[3)多量子阱结构中电场引起的光致发光光谱的分裂和负微分电阻。研究发现，当…更垂直的电场超过某一临界值时，场致相邻势垒中两个最低量子能级的共振耦合，导致光致发光光谱的分裂和光电流的负微分电阻。[4]以超晶格合金材料为势垒的半导体量子阱中的能级和电子波函数。研究了利用超短周期超晶格形成势垒时，量子阱中的能级和波函数。修正的Kronig-Penney分析在预测观测能量方面是有效的，并阐明了波函数增强穿透势垒层的特征。实验研究了具有GaAsAlGaAs超晶格有源层的有源光学谐振腔和具有很短周期的低折射率材料的多层光学反射镜。研究发现，模式耦合和模式竞争是理解这些谐振器行为的基本现象。较少