Control of Optical Properties of Quantum Well Structures by Carrier Induced Effects and its Applications to Novel Optical Devices

载流子效应控制量子阱结构的光学特性及其在新型光学器件中的应用

• 批准号: 63460138
• 负责人: HAMASAKI Joji
• 金额: $ 3.9万
• 依托单位: University of Tokyo (Institute of Industrial Science)
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for General Scientific Research (B)
• 财政年份: 1988
• 资助国家: 日本
• 起止时间: 1988 至 1989
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-63460138/
• 关键词: Carrier-Induced Effect; Quantum Well; Excitonic Effect; Magneto-Exciton; GaAs; AlGaAs; Resonant Tunneling Diode; Optical Device; Optical Property

1. Demonstration of the field-induced blue-shift of the absorption edge in potential inserted quantum wells To get a novel electro-optic effect in quantum wells(QW), we proposed a potential inserted QWS(PI-QW), in which two coupled wells are separated by a thin AlAs barrier. PI-QWs are exhibit a unique field- induced optical effect since the overlap matrix elements between electrons and holes are more strongly modulated by the transverse electric fields F than in conventional QWs. We have observed the blue shift of the absorption edge by applying F , which is opposite in direction to the Stark shift in usual QWs, demonstrating a unique feature of PI-QWs.2.Control and clarification of carrier induced optical effect in QW structures To clarify carrier induced optical effects, we have investigated optical properties of QW field effect transistors(QW-FET). With the increase of electron density, the absorption edge shifted to higher energy and the luminescence peak shifted to lower energy. … More By comparing these observations with theory, the bandfilling and many body effect are quantitatively clarified. Furthermore, we have shown that this carrier induced bleaching and the accompanied change of refractive index can be applied to optical modulators and switches.3 Carrier-induced instability of two dimensional excitonic state and enhancement of excitonic interaction under high magnetic fields To disclose whether the recombination process is excitonic or free carrier like, the magnetic field dependence of photoluminescence is studied in QW-FETs at various electron concentration. The carrier induced transition of recombination process from excitonic to free carrier dominated process is demonstrated. In addition, the effect of high magnetic fields on free carrier recombination is studied to show that excitonic feature is recovered in recombination processes in QWs at. high magnetic fields, demonstrating the formation of magneto exciton.4 Carrier-induced optical effect in resonant tunneling structure In double barrier resonant tunneling diode(DBRTD), electrons are accumulated in the QW region of DBRTD under the resonant condition. Thus, one expects the carrier induced optical effect in DBRTD. We have observed clearly the blue shift of the absorption edge and lowering of photoluminescence energy under the resonant condition, from which the accumulated electron concentration is determined. The observed blue shift of absorption suggests the applicability of DBRTD to high speed optical modulators and switches. Less

1. 为了在量子阱（QW）中获得一种新的电光效应，我们提出了一种势插入量子阱（PI-QW），其中两个耦合阱被薄的AlAs势垒隔开。PI-QWs表现出独特的场致光学效应，因为电子和空穴之间的重叠矩阵元素受到横向电场F的调制比传统QWs更强。我们通过施加F观察到吸收边的蓝移，这与通常QWs的Stark位移方向相反，显示了pi -QWs的独特特征。为了阐明载流子诱导的光学效应，我们研究了QW场效应晶体管（QW- fet）的光学特性。随着电子密度的增加，吸收边向高能量方向移动，发光峰向低能方向移动。通过与理论的比较，定量地阐明了带填充效应和多体效应。此外，我们已经证明这种载流子引起的漂白和伴随的折射率变化可以应用于光调制器和开关为了揭示复合过程是激子式的还是自由载流子式的，研究了不同电子浓度下qw - fet中光致发光的磁场依赖性。证明了载流子诱导的复合过程从激子主导过程向自由载流子主导过程的转变。此外，研究了强磁场对自由载流子复合的影响，表明在量子阱中，复合过程恢复了激子特征。高磁场，证明磁激子的形成谐振隧道结构中的载流子诱导光学效应在双势垒谐振隧道二极管（DBRTD）中，电子在谐振条件下在DBRTD的QW区积累。因此，人们期望在DBRTD中存在载流子诱导的光学效应。我们清楚地观察到在共振条件下吸收边的蓝移和光致发光能量的降低，由此可以确定累积的电子浓度。观察到的吸收蓝移表明DBRTD适用于高速光调制器和开关。少

项目成果

H.Yoshimura: "Carrier-Induced Transition from Exatonic to Free-Carrier Like Radiative Recombination in a Semiconductor Quantum well Studied by Maneto Liminescence" Phys.Rev.B39. 13024-13027 (1989)

H.Yoshimura：“Maneto Liminescent 充分研究了半导体量子中从超音速到类自由载流子辐射复合的载流子诱导跃迁”Phys.Rev.B39。

H.Yoshimura;G.E.W.Bauer;H.Sakaki: Physical Review B. 38. 10291-10797 (1988)

H.Yoshimura；G.E.W.Bauer；H.Sakaki：物理评论 B. 38. 10291-10797 (1988)

吉村尚郎,榊 裕之: 第49回応用物理学会学術講演会 講演予稿集. 1002 (1988)

Hisao Yoshimura，Hiroyuki Sakaki：日本应用物理学会第 49 届学术会议论文集 1002（1988）。

H.Yoshimura: "Charge Accumulation in a Double Barrier Resonant Tunnling Structure Studied by Photoluminescence and Photoluminescence Excitsation Spectroscopy" submitted to Phys.Rev.Lett.

H.Yoshimura：“通过光致发光和光致发光激发光谱研究双势垒共振隧道结构中的电荷累积”，提交给 Phys.Rev.Lett。

H.Yoshimura, G.E.Bauer and H. Sakaki: "Carrier-Induced Shift and Broadening of in an AlxGal-xAs/GaAs Quantum Well with a Gate ectrode" Rev. B38, 15, 10791-10797, 1988.11.

H.Yoshimura、G.E.Bauer 和 H. Sakaki：“带有栅极电极的 AlxGal-xAs/GaAs 量子阱中的载流子诱导位移和展宽”Rev. B38, 15, 10791-10797, 1988.11。