Self-development and dry stripping of polymer resists by photoetching with ultraviolet light.

我们进行了质谱研究的蒸发物种在紫外（UV）和真空紫外（VUV）光照射的聚合物抗蚀剂，包括聚（甲基丙烯酸甲酯）（PMMA），并发现了显着的差异，在UV和VUV照射期间获得的光谱。在真空紫外辐照下，观察到明显的主链直接断裂的质量峰。此外，在低于上限温度的真空蚀刻中，发现了有效的解链反应生成单体。另一方面，在CF_4/O_2气体2.4k GHz放电产生的反应物种的存在下，研究了用VUV光定向光刻硅（100）和PMMA的可能性。对于这两种材料，由反应物种的化学干法蚀刻明显增强真空紫外线照射到材料的表面。结果表明，真空紫外诱导刻蚀是表面光化学反应的结果，有利于产生各向异性光刻。

We performed mass spectroscopic study of vaporized species during ultraviolet (UV) and vacuum UV (VUV) light irradiation to polymer resists including poly(methylmethacrylate) (PMMA), and found a remarkable difference between the spectra obtained during UV and VUV irradiation. In the case of VUV irradiation, the intense mass peaks which are the result of direct main chain scission were obviously observed. Further, the effective unzipping reaction to produce monomer was found for the etching in vacuum at a temperature below the ceiling temperature.On the other hand, the possibility of directional photoetching of silicon (100) and PMMA was studied using VUV light under the existence of reactive species pruduced by 2.4k GHz discharge of CF_4/0_2 gas. For both materials, the chemical dry etching by the reactive species was clearly enhanced by VUV irradiation to the surface of the materials. The results indicate that the VUV induced etching is the result of a surface photochemical reaction which is useful in producing anisotropic photoetching.